Transmission electron microscopy of GeSe2+δ thin films

Abstract

GeSe2 can exist in both amorphous and crystalline phases. Although most semiconductor devices are constructed from crystalline materials, the use of amorphous materials in devices has high potential. The study of GeSe2 is especially interesting since it has been established that an amorphous-to-crystalline transition can be induced by laser irradiation. In order to better understand this phenomenon, it is necessary to study the microstructure of GeSe2 glass. Therefore, transmission electron microscopy studies were undertaken to investigate the degree of crystallinity of GeSe2 glass. It was found that small microcrystallites with diameters in the range of 100–300 Å were embedded in a glass matrix. These microcrystallites formed larger clusters in some areas.

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Maghsoudlou, H., Salamanca-Riba, L. & Haro-Poniatowski, E. Transmission electron microscopy of GeSe2+δ thin films. Journal of Materials Research 8, 1728–1735 (1993). https://doi.org/10.1557/JMR.1993.1728

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