Solid solutions of AlN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy

Abstract

Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC), the only intermediate phases in their respective binary systems, have been grown at 1050 °C on α(6H)-SiC(0001) substrates cut 3–4° off-axis toward [11$\overline 1$0] using plasma-assisted, gas-source molecular beam epitaxy. A film having the approximate composition of (AlN)0.3(SiC)0.7, as determined by Auger spectrometry, was selected for additional study and is the focus of this note. High resolution transmission electron microscopy (HRTEM) revealed that the film was monocrystalline with the wurtzite (2H) crystal structure.

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References

  1. 1

    G.R. Fisher and P. Barnes. Philos, Mag. B 61. 217 (1990).

    CAS  Article  Google Scholar 

  2. 2

    Z. Sitar. M.J. Paisley, and R.F. Davis. Annual Progress Report. ONR Contract N00014-86-K-0686, June 1, 1989.

  3. 3

    S. Strite and H. Makoç, private communication.

  4. 4

    G.A. Slack. J. Phys. Them. Solids 34, 321 (1973).

    CAS  Article  Google Scholar 

  5. 5

    W. M. Yim, E.J. Stofko, P.J. Zanzucci. J.I. Pankove, M. Ettenbcrg. and S. L. Gilbert, J. Appl. Phys. 44, 292 (1973).

    CAS  Article  Google Scholar 

  6. 6

    C. Matignon, C. R. Acad. Sci. 178, 1615 (1924).

    CAS  Google Scholar 

  7. 7

    W. Rataniello. K. Cho. and A V. Vikar. J. Mater. Sci. 16, 3479 (1981).

    CAS  Article  Google Scholar 

  8. 8

    W. Rafanicllo, M.R. Plinchta, and A. V. Vikar, J. Am. Ccram. Soc. 66, 272 (1983).

    CAS  Article  Google Scholar 

  9. 9

    R. Ruh and A. Zangvil. J. Am. Ceram. Soc. 65, 260 (1982).

    CAS  Article  Google Scholar 

  10. 10

    A. Zangvil and R. Ruh. Mater. Sci. Eng. 71, 159 (1985).

    Article  Google Scholar 

  11. 11

    A. Zangvil and R. Ruh. J. Am. Ceram. Soc. 71, 884 (1988).

    CAS  Article  Google Scholar 

  12. 12

    A. Zangvil and R. Ruh, in Silicon Carbide ‘87 (The American Ceramic Society, Westerville, OH. 1989), pp. 63–82.

    Google Scholar 

  13. 13

    S. Kuo and A. V. Vikar, J. Am. Ccram. Soc. 73, 2460 (1990).

    Article  Google Scholar 

  14. 14

    C. L. Czckaj, M. L.J. Hackney, W. J. Hurley, Jr., L. V. Interrante, G. A. Sigel, PJ. Schields, and G. A. Slack, J. Am. Ccram. Soc. 73, 352 (1990).

    CAS  Article  Google Scholar 

  15. 15

    Sh. A. Nurmagomedov, A.N. Pitkin, V.N. Razbegaev, G. K. Safaralicv, Yu. M. Tairov, and V. F. Tsvetkov, Sov. Phys. Semicond. 23, 100 (1989).

    Google Scholar 

  16. 16

    I. Jenkins, K. G. Irvine, M. G. Spencer, V. Dmitriev, and N. Chen (in press).

  17. 17

    L. B. Rowland, S. Tanaka, R.S. Kern, and R. F. Davis, in Proceedings of the Fourth International Conference on Amorphous and Crystalline Silicon Carbide (Springer-Verlag, Berlin, 1992), in press.

    Google Scholar 

  18. 18

    A. Zalar, Thin Solid Films 124, 223 (1985).

    CAS  Article  Google Scholar 

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Kern, R.S., Rowland, L.B., Tanaka, S. et al. Solid solutions of AlN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy. Journal of Materials Research 8, 1477–1480 (1993). https://doi.org/10.1557/JMR.1993.1477

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