Absorption coefficient of β–SiC grown by chemical vapor deposition

Journal of Materials Research volume 7, Article number: 53 (1992) Cite this article

Abstract

The absorption coefficient of β–SiC is measured by the transmission technique. β–SiC films are grown on Si substrates by chemical vapor deposition using a buffer layer between β–SiC and the substrate. The absorption coefficient value ranges from 10 to 5.5 × 104 cm−1 in the energy range between 2.42 and 4.4 eV. The bandgap of β–SiC films investigated in this study ranges between 2.13 and 2.32 eV.

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Affiliations

  1. Department of Electrical and Computer Engineering, Clarkson University, Potsdam, New York, 13699, USA

    Attaullah Solangi & M. I. Chaudhry

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  1. Attaullah Solangi
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  2. M. I. Chaudhry
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Correspondence to Attaullah Solangi.

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Solangi, A., Chaudhry, M.I. Absorption coefficient of β–SiC grown by chemical vapor deposition. Journal of Materials Research 7, 53 (1992). https://doi.org/10.1557/JMR.1992.0539

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