Thermal regrowth of ion-damaged YBa2Cu3O7−δ superconducting thin films


Regrowth of ion-damaged YBa2Cu3O7−δ thin films on LaAlO3 was studied using the ion beam channeling technique. The damaged films can be regrown at a temperature as low as 650 °C, and are stable up to 1000 °C. The regrowth process was found to be thermally activated with a single activation energy of 0.46 eV, contrary to two energies found in a previous study on the films on MgO [J. A. Martinez et al., Appl. Phys. Lett. 57, 189 (1990)].

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Wu, X.D., Luo, L., Muenchausen, R.E. et al. Thermal regrowth of ion-damaged YBa2Cu3O7−δ superconducting thin films. Journal of Materials Research 7, 53 (1992).

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