Thermal regrowth of ion-damaged YBa2Cu3O7−δ superconducting thin films

Abstract

Regrowth of ion-damaged YBa2Cu3O7−δ thin films on LaAlO3 was studied using the ion beam channeling technique. The damaged films can be regrown at a temperature as low as 650 °C, and are stable up to 1000 °C. The regrowth process was found to be thermally activated with a single activation energy of 0.46 eV, contrary to two energies found in a previous study on the films on MgO [J. A. Martinez et al., Appl. Phys. Lett. 57, 189 (1990)].

This is a preview of subscription content, access via your institution.

References

  1. 1.

    J. A. Martinez, Β. Wilkens, N. G. Stoffel, D. Hart, L. Nazar, T. Venkatesan, A. Inam, and X. D. Wu, Appl. Phys. Lett. 57, 189 (1990).

    CAS  Article  Google Scholar 

  2. 2.

    D. M. Hwang, T. S. Ravi, R. Ramesh, Sui Wai Chan, C. Y. Chen, L. Nazar, X. D. Wu, A. Inam, and T. Venkatesan Appl. Phys. Lett. 57, 1690 (1990).

    CAS  Article  Google Scholar 

  3. 3.

    S. R. Foltyn, R. E. Muenchausen, R. C. Dye, X. D. Wu, L. Luo, D. W. Cooke, and R. C. Taber, Appl. Phys. Lett. 59, 1374 (1991).

    CAS  Article  Google Scholar 

  4. 4.

    X. D. Wu, R. E. Muenchausen, S. Foltyn, R. C. Estler, R. C. Dye, A. R. Garcia, N. S. Nogar, P. England, R. Ramesh, D. M. Hwang, T. S. Ravi, C. C. Chang, X. X. Xi, Q. Li, and A. Inam, Appl. Phys. Lett. 57, 523 (1990).

    CAS  Article  Google Scholar 

  5. 5.

    J. S. Williams, in Surface Modification and Alloying by Laser, Ion and Electron Beams, edited by J. M. Poate, G. Foti, and D. C. Jacobson (Plenum Press, New York, 1983), Chap. 5.

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to X. D. Wu.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Wu, X.D., Luo, L., Muenchausen, R.E. et al. Thermal regrowth of ion-damaged YBa2Cu3O7−δ superconducting thin films. Journal of Materials Research 7, 53 (1992). https://doi.org/10.1557/JMR.1992.0531

Download citation