Epitaxial growth of β–SiC on Si by low-temperature chemical vapor deposition

Abstract

In this paper we report the growth of β–SiC films on Si(100) substrates by low-temperature chemical vapor deposition. Single crystals of β–SiC are grown at temperatures as low as 1150 °C. Low-temperature growth β–SiC is achieved using a SiH4–C3H8–H2–Ar gas system. The growth rate of films grown at 1150 °C is 1 μm/h. Transmission electron microscopy and x-ray diffraction results indicate that the β-SiC films grown at and above 1150 °C are single crystals. Films grown at temperatures lower than 1150 °C are polycrystalline.

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Correspondence to M. Iqbal Chaudhry.

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Chaudhry, M.I., Wright, R.L. Epitaxial growth of β–SiC on Si by low-temperature chemical vapor deposition. Journal of Materials Research 5, 1595–1598 (1990). https://doi.org/10.1557/JMR.1990.1595

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