Effects of the band offset on interfacial deep levels

Abstract

The energy levels of antisite defects at a GaAs/Ge (110) interface are calculated and shown to be essentially unaltered with respect to the GaAs valence band maximum by different choices of the valence band offset.

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Correspondence to Richard P. Beres.

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Beres, R.P., Allen, R.E. & Dow, J.D. Effects of the band offset on interfacial deep levels. Journal of Materials Research 3, 164–166 (1988). https://doi.org/10.1557/JMR.1988.0164

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