Abstract
In-situ silicon nitride and a whisker-reinforced silicon nitride-silicon nitride composite, densified via gas pressure sintering and hot pressing, respectively, were evaluated using the single-edge V-notched beam (SEVNB) fracture toughness technique. The mean value ofK IC for each material was 5.7 and 7.9 MPa·m1/2, respectively, and the toughness was influenced by the presence of the elongated Si3N4 grains in the microstructure. The notch radius was observed to have the same effect as a sharp crack when notch-root radius was smaller than 10 µm, which was considered to be a realK IC for these materials.
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Vasconcelos Rocha, C., da Costa, C.A. Effect of notch-root radius on the fracture toughness of composite Si3N4 ceramics. J. of Materi Eng and Perform 15, 591–595 (2006). https://doi.org/10.1361/105994906X136106
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DOI: https://doi.org/10.1361/105994906X136106