Fabrication of TiSi2 using microwave hydrogen plasma annealing
- 61 Downloads
A new method, microwave hydrogen plasma annealing of sputter-deposited titanium films on an Si (111) substrate, was used to fabricate TiSi2 films. The films were characterized by x-ray diffraction, Auger electron spectroscopy, sputter depth profiling, and four-point probe resistivity measurements. Polycrystalline TiSi2, dominated by components with (040) orientation, was grown at the annealing temperature of 800 °C. The microwave hydrogen plasma was considered not only to provide the heat for the solid-phase reaction, but also to promote the solid-phase reaction by enhancing atom mobility and diffusion.
Keywordsmicrowave hydrogen plasma annealing silicide titanium
Unable to display preview. Download preview PDF.
- 4.J.A. Gardner, M.V. Rao, Y.L. Tian, O.W. Holland, E.G. Roth, P.H. Chi, and I. Ahmad, Rapid Thermal Annealing of Ion Implanted 6H-SiC by Microwave Processing, J. Electron. Mater., Vol 26, 1997, p 144–150Google Scholar