Fabrication of TiSi2 using microwave hydrogen plasma annealing

  • Tao Wang
  • Hi-Deok Lee
  • Y. B. Dai


A new method, microwave hydrogen plasma annealing of sputter-deposited titanium films on an Si (111) substrate, was used to fabricate TiSi2 films. The films were characterized by x-ray diffraction, Auger electron spectroscopy, sputter depth profiling, and four-point probe resistivity measurements. Polycrystalline TiSi2, dominated by components with (040) orientation, was grown at the annealing temperature of 800 °C. The microwave hydrogen plasma was considered not only to provide the heat for the solid-phase reaction, but also to promote the solid-phase reaction by enhancing atom mobility and diffusion.


microwave hydrogen plasma annealing silicide titanium 


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Copyright information

© ASM International 2005

Authors and Affiliations

  • Tao Wang
    • 1
  • Hi-Deok Lee
    • 1
  • Y. B. Dai
    • 2
  1. 1.Microelectronic Device & System Laboratory, Department of Electronics EngineeringChungnam National UniversityDaejeonKorea
  2. 2.School of Materials Science and EngineeringShangHai Jiao Tong UniversityPeoples Republic of China

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