Fabrication of TiSi2 using microwave hydrogen plasma annealing
A new method, microwave hydrogen plasma annealing of sputter-deposited titanium films on an Si (111) substrate, was used to fabricate TiSi2 films. The films were characterized by x-ray diffraction, Auger electron spectroscopy, sputter depth profiling, and four-point probe resistivity measurements. Polycrystalline TiSi2, dominated by components with (040) orientation, was grown at the annealing temperature of 800 °C. The microwave hydrogen plasma was considered not only to provide the heat for the solid-phase reaction, but also to promote the solid-phase reaction by enhancing atom mobility and diffusion.
Keywordsmicrowave hydrogen plasma annealing silicide titanium
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