A thermodynamic reassessment of the Al-As-Ga system

Abstract

The Al-As-Ga system is one of the most important III-V mixed crystal systems because of its advantages as a heterostructure. There are more phase equilibria data available for this system over a wider range of temperatures and compositions, than for any other III-V ternary system. In this paper, the experimental phase diagram data of the Al-As-Ga ternary system have been assessed comprehensively and critically. Especially, the most recent experiments are considered. The interaction parameters of the liquid phase and the semiconductor compound are provided. With the assessed thermodynamic parameters, the pseudobinary AlAs-GaAs phase diagram, the Al-As-Ga ternary isothermal sections, and the solidus isoconcentration curves were calculated and compared with the related experimental data.

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Li, C., Li, J.B., Du, Z. et al. A thermodynamic reassessment of the Al-As-Ga system. JPE 22, 26–33 (2001). https://doi.org/10.1361/105497101770339265

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Keywords

  • GaAs
  • Differential Thermal Analysis
  • Liquid Phase Epitaxy
  • Excess Gibbs Energy
  • Phase Diagram Data