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Valence electronic structure and cohesive property of a binary noble metal nitride

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Chinese Science Bulletin

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Abstract

The valence electronic structure of a newly synthesized binary noble metal nitride PtN is obtained by utilizing an empirical electronic theory. The results reveal that the valence electron configuration of the nitride is: Pt 6s 0.143, 6p 1.286, 5d 3.0; N 2s 0.5694, 2p 2.4306. Such a configuration is different from that used to generate pseudopotential for the first principle calculations, and may explain why the calculated and experimental values of the bulk modulus of PtN cannot coincide. In addition, we also calculate the cohesive energy of this new phase based on the valence electronic structure, which is −674.75 kJ/mol.

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References

  1. Eremets, M. I., Gavriliuk, A. G., Trojan, I. A. et al., Single-bonded cubic form of nitrogen, Nature Material, 2004, 8: 558.

    Google Scholar 

  2. Liu, A. Y., Cohen, M. L., Prediction of new low compressibility solids, Science, 1989, 245: 841.

    Article  PubMed  CAS  Google Scholar 

  3. Perlin, P., Jauberthie-Carllon, C., Paul Itie, J. et al., Raman scattering and X-ray-absorption spectroscopy in gallium nitride under high pressure, Phys. Rev. B, 1992, 45: 83.

    Article  CAS  Google Scholar 

  4. Grossman, J. C., Mizel, A., Cote, M., Cohen, M. L. et al., Transition metals and their carbides and nitrides: Trends in electronic and structural properties, Phys. Rev. B, 1999, 60: 6343.

    Article  CAS  Google Scholar 

  5. Mattesini, M., Ahuja, R., Johansson, B., Cubic Hf3N4 and Zr3N4: A class of hard materials, Phys. Rev. B, 2003, 68: 184108.

    Article  Google Scholar 

  6. Gregoryanz, E., Sanloup, C., Somayazulu, M. et al., Synthesis and characterization of a binary noble metal nitride, Nature Mater., 2004, 5: 294.

    Article  Google Scholar 

  7. Sealy, C., Noble metal nitrides under pressure, Mater. Today, 2004, 7: 15.

    Google Scholar 

  8. Yu, S. H., Empirical electronic theory of solids and molecules, Chin. Sci. Bull, (in Chinese), 1978, 23: 217.

    CAS  Google Scholar 

  9. Guo, Y. Q., Yü, R. H., Zhang, R. L. et al., Calculation of magnetic properties and analysis of valence electronic structures of LaT13−xAlx (T = Fe, Co) compounds, J. Phys. Chem. B, 1998, 102: 9.

    Article  CAS  Google Scholar 

  10. Pauling, L., The Nature of the Chemical Bond, New York: Cornell University Press, 1960.

    Google Scholar 

  11. Liu, Z. L., Valence Structures of Alloys and Composition Design (in Chinese), Beijing: Science Press, 1990.

    Google Scholar 

  12. Zhang, R. L., Empirical Electronic Theory of Solids and Molecules (in Chinese), Changchun: Jilin Science and Technology, 1993.

    Google Scholar 

  13. Xu, W. D., Zhang, R. L., Yu, R. H., Calculations for crystal cohesive energy of transition metal compounds, Sci. in China, 1989, 33(3): 351–360.

    Google Scholar 

  14. Li, P. J., Xiong, Y. H., Liu, S. X., Electron theory study on mechanism of action of cobalt in Fe-Co-Cr based high-alloy steel, Chinese Science Bulletin, 2003, 48: 208.

    Article  CAS  Google Scholar 

  15. Ho, K. M., Fu, C. L., First-principles calculation of the equilibrium ground-state properties of transition metals: Application to Nb & Mo, Phys. Rev. B, 1983, 28: 5480.

    Article  Google Scholar 

  16. Eichinger, B. E., Rigby, D., Stein, J., Cohesive properties of Ultem and related molecules from simulations, Polymer, 2002, 43: 599.

    Article  CAS  Google Scholar 

  17. www.webelements.com

Download references

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Correspondence to Changzeng Fan.

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Fan, C., Sun, L., Zhang, J. et al. Valence electronic structure and cohesive property of a binary noble metal nitride. Chin.Sci.Bull. 50, 1079–1082 (2005). https://doi.org/10.1360/982004-622

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  • DOI: https://doi.org/10.1360/982004-622

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