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The growth of γ-LiAlO2 layer with a highly-preferred orientation on (0001) sapphire

  • Li Shuzhi 
  • Yang Weiqiao 
  • Zhou Shengming 
  • Xu Jun 
Article
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Abstract

Using vapor transport equilibration (VTE) technique we succeeded in the fabrication of single-phase γ-LiAlO2 layer on (0001) sapphire substrate. X-ray diffraction indicated that the as-fabricated layer was highly textured with [100] orientation at proper VTE treatment temperature range from 1050°C to 1100°C. The main factors affecting the quality of the γ-LiAlO2 layer were investigated by SEM and transmission spectra. These results reveal the possibility of fabricating γ-LiAlO2 (100)// sapphire (0001) composite substrate for GaN-based epitaxial film by VTE.

Keywords

γ-LiAlO2 composite substrate vapor transport equilibration 

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Copyright information

© Science in China Press 2005

Authors and Affiliations

  • Li Shuzhi 
    • 1
  • Yang Weiqiao 
    • 1
  • Zhou Shengming 
    • 1
  • Xu Jun 
    • 1
  1. 1.Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghaiChina

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