The growth of γ-LiAlO2 layer with a highly-preferred orientation on (0001) sapphire
- 21 Downloads
Using vapor transport equilibration (VTE) technique we succeeded in the fabrication of single-phase γ-LiAlO2 layer on (0001) sapphire substrate. X-ray diffraction indicated that the as-fabricated layer was highly textured with  orientation at proper VTE treatment temperature range from 1050°C to 1100°C. The main factors affecting the quality of the γ-LiAlO2 layer were investigated by SEM and transmission spectra. These results reveal the possibility of fabricating γ-LiAlO2 (100)// sapphire (0001) composite substrate for GaN-based epitaxial film by VTE.
Keywordsγ-LiAlO2 composite substrate vapor transport equilibration
Unable to display preview. Download preview PDF.
- 1.Liang Guangchun, Zhang Yi, GaN-Dawn of 3rd-generation-semiconductors, Chinese Journal of Semiconductors, 1999, 2: 89–99.Google Scholar
- 5.Waltereit, P., Brandt, O., Ramsteiner, M. et al., M-plane GaNel (1 100) grown on g-LiAlO2 (100): nitride semiconductors free of internal electrostatic fields, J. Cryst Growth, 2001, 437: 227–228.Google Scholar