Abstract
Using vapor transport equilibration (VTE) technique we succeeded in the fabrication of single-phase γ-LiAlO2 layer on (0001) sapphire substrate. X-ray diffraction indicated that the as-fabricated layer was highly textured with [100] orientation at proper VTE treatment temperature range from 1050°C to 1100°C. The main factors affecting the quality of the γ-LiAlO2 layer were investigated by SEM and transmission spectra. These results reveal the possibility of fabricating γ-LiAlO2 (100)// sapphire (0001) composite substrate for GaN-based epitaxial film by VTE.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Liang Guangchun, Zhang Yi, GaN-Dawn of 3rd-generation-semiconductors, Chinese Journal of Semiconductors, 1999, 2: 89–99.
Detchprohm, T., Hiramatsu, K., Amano, H. et al., Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer, Appl. Phys. Lett., 1992, 61: 2688–2693.
Liu, L., Edgar, J. H., Substrates for gallium nitride epitaxy, Mater. Sci. Eng., 2002, R 37: 61–69.
Xu Ke, Xu Jun, Deng Peizhen et al., γ-LiAlO2 single crystal: a novel substrate for GaN epitaxy, J. Crystal Growth, 1998, 193: 127–132.
Waltereit, P., Brandt, O., Ramsteiner, M. et al., M-plane GaNel (1 100) grown on g-LiAlO2 (100): nitride semiconductors free of internal electrostatic fields, J. Cryst Growth, 2001, 437: 227–228.
Shur, V. Y., Blankova, E. B., Rumyantsev, E. L. et al., X-ray-induced phase transformation in congruent and vapor-transport-equilibrated lithium tantalate and lithium niobate, Appl. Phys. Lett., 2002, 80(6): 1037–1041.
Chen, Y. L., Zhang, W. L., Shu, Y. C., et al., Determination of the Li/Nb ratio in LiNbO 3 crystals prepared by vapor transport equilibration method, Optical Materials, 2003, 23: 295–298.
Bäumer, C., Berben, D., Buse, K. et al., Determination of the composition of lithium tantalate crystals by zero-birefringence measurements, Appl. Phys. Lett., 2003, 82(14): 2248–2252.
Zhang, D. L., Pun, E. Y. B., Emission characteristics of vapor transport equilibrated Er: LiNbO[sub 3] crystals, J. Appl. Phys., 2003, 93(6): 3141–3151.
Bordui, P. F., Norwood, R. G., Preparation and characterization of off-congruent lithium niobate crystals, J. Appl. Phys., 1992, 71(2): 875–882.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Li, S., Yang, W., Zhou, S. et al. The growth of γ-LiAlO2 layer with a highly-preferred orientation on (0001) sapphire. Sci. China Ser. E-Technol. Sci. 48, 116–120 (2005). https://doi.org/10.1360/04ye0209
Received:
Issue Date:
DOI: https://doi.org/10.1360/04ye0209