The growth of γ-LiAlO2 layer with a highly-preferred orientation on (0001) sapphire

  • Li Shuzhi 
  • Yang Weiqiao 
  • Zhou Shengming 
  • Xu Jun 


Using vapor transport equilibration (VTE) technique we succeeded in the fabrication of single-phase γ-LiAlO2 layer on (0001) sapphire substrate. X-ray diffraction indicated that the as-fabricated layer was highly textured with [100] orientation at proper VTE treatment temperature range from 1050°C to 1100°C. The main factors affecting the quality of the γ-LiAlO2 layer were investigated by SEM and transmission spectra. These results reveal the possibility of fabricating γ-LiAlO2 (100)// sapphire (0001) composite substrate for GaN-based epitaxial film by VTE.


γ-LiAlO2 composite substrate vapor transport equilibration 


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  1. 1.
    Liang Guangchun, Zhang Yi, GaN-Dawn of 3rd-generation-semiconductors, Chinese Journal of Semiconductors, 1999, 2: 89–99.Google Scholar
  2. 2.
    Detchprohm, T., Hiramatsu, K., Amano, H. et al., Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer, Appl. Phys. Lett., 1992, 61: 2688–2693.CrossRefGoogle Scholar
  3. 3.
    Liu, L., Edgar, J. H., Substrates for gallium nitride epitaxy, Mater. Sci. Eng., 2002, R 37: 61–69.CrossRefGoogle Scholar
  4. 4.
    Xu Ke, Xu Jun, Deng Peizhen et al., γ-LiAlO2 single crystal: a novel substrate for GaN epitaxy, J. Crystal Growth, 1998, 193: 127–132.CrossRefGoogle Scholar
  5. 5.
    Waltereit, P., Brandt, O., Ramsteiner, M. et al., M-plane GaNel (1 100) grown on g-LiAlO2 (100): nitride semiconductors free of internal electrostatic fields, J. Cryst Growth, 2001, 437: 227–228.Google Scholar
  6. 6.
    Shur, V. Y., Blankova, E. B., Rumyantsev, E. L. et al., X-ray-induced phase transformation in congruent and vapor-transport-equilibrated lithium tantalate and lithium niobate, Appl. Phys. Lett., 2002, 80(6): 1037–1041.CrossRefGoogle Scholar
  7. 7.
    Chen, Y. L., Zhang, W. L., Shu, Y. C., et al., Determination of the Li/Nb ratio in LiNbO 3 crystals prepared by vapor transport equilibration method, Optical Materials, 2003, 23: 295–298.CrossRefGoogle Scholar
  8. 8.
    Bäumer, C., Berben, D., Buse, K. et al., Determination of the composition of lithium tantalate crystals by zero-birefringence measurements, Appl. Phys. Lett., 2003, 82(14): 2248–2252.CrossRefGoogle Scholar
  9. 9.
    Zhang, D. L., Pun, E. Y. B., Emission characteristics of vapor transport equilibrated Er: LiNbO[sub 3] crystals, J. Appl. Phys., 2003, 93(6): 3141–3151.CrossRefGoogle Scholar
  10. 10.
    Bordui, P. F., Norwood, R. G., Preparation and characterization of off-congruent lithium niobate crystals, J. Appl. Phys., 1992, 71(2): 875–882.CrossRefGoogle Scholar

Copyright information

© Science in China Press 2005

Authors and Affiliations

  • Li Shuzhi 
    • 1
  • Yang Weiqiao 
    • 1
  • Zhou Shengming 
    • 1
  • Xu Jun 
    • 1
  1. 1.Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghaiChina

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