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Synthesis of ZnAl2O4/α-Al2O3 complex substrates and growth of GaN films

  • Zhaoxia Bi
  • Rong Zhang
  • Weiping Li
  • Xusheng Wang
  • Shulin Gu
  • Bo Shen
  • Yi Shi
  • Zhiguo Liu
  • Youdou Zheng
Article
  • 44 Downloads

Abstract

With the solid phase reaction between pulsed-laser-deposited (PLD) ZnO film and α-Al2O3 substrate, ZnAl2O4/α-Al2O3 complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl2O4 changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM) images indicate that the surface morphology of ZnAl2O4 transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRD spectra present that ZnAl2O4 prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl2O4/α-Al2O3 substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes fromc-axis single crystal to poly-crystal as ZnAl2O4 layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl2O4 layer can promote nucleation at initial stage of GaN growth, which leads to the (0001)-oriented GaN film.

Keywords

GaN ZnAl2O4 MOCVD X-ray diffraction scanning electron microscope 

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References

  1. 1.
    Liang, C. G., Zhang, Y., GaN—dawn of 3rd-generation-semiconductors, Chinese Journal of Semiconductors (in Chinese), 1999, 20(1): 89.Google Scholar
  2. 2.
    Detchprohm, T., Hiramatsu, K., Amano, K., et al., Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer, Appl. Phys. Lett., 1992, 61(22): 2688.CrossRefADSGoogle Scholar
  3. 3.
    Akasaki, I., Amano, H., Koide, Y. et al., Effects of AIN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0<x≤0.4) films grown on sapphire substrate by MOVPE, J. Crystal Growth, 1989, 98: 209.CrossRefADSGoogle Scholar
  4. 4.
    Nakamura, S., GaN growth using GaN buffer layer, Jpn. J. Appl. Phys., 1991, 30(10A): L1705.CrossRefADSGoogle Scholar
  5. 5.
    Hersee, S. D., Ramer, J., Zheng, K. et al., The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire, J. Electron. Mater., 1995, 24(11): 1519.CrossRefADSGoogle Scholar
  6. 6.
    Keller, B. P., Keller, S., Kapolnek, D. et al., Effect of atmospheric pressure MOCVD growth conditions on UV band-edge photoluminescence on GaN, Electron. Lett., 1995, 31(13): 1102.CrossRefGoogle Scholar
  7. 7.
    Kapolnek, D., Wu, X. H., Heying, B. et al., Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire, Appl. Phys. Lett., 1995, 67(11): 1541.CrossRefADSGoogle Scholar
  8. 8.
    Keller, S., Keller, B. P., Wu, Y. F. et al., Influence of sapphire nitridation on properties of GaN grown by metalorganic chemical vapor deposition, Appl. Phys. Lett., 1996, 68(11): 1525.CrossRefADSGoogle Scholar
  9. 9.
    Hamdani, F., Botchkarev, A., Kim, W., et al., Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy, Appl. Phys. Lett., 1997, 70(4): 467.CrossRefADSGoogle Scholar
  10. 10.
    Ueda, T., Huang, T. F., Spruytte, S. et al., Vapor phase epitaxy growth of GaN on pulsed laser deposited ZnO buffer layer, J. Crystal Grow., 1998, 187: 340.CrossRefADSGoogle Scholar
  11. 11.
    Detchprohm, T., Amano, H., Hiramatsu, K. et al., The growth of thick GaN film on sapphire substrates by using ZnO buffer layer, J. Crystal Grow., 1993, 128: 384.CrossRefADSGoogle Scholar
  12. 12.
    Gu, S. L., Zhang, R., Sun, J. S. et al., The nature and impact of ZnO buffer layers on the initial stages of the hydride vapor phase epitaxy of GaN, MRS Internet Journal of Nitride semiconductor Research, 2000, 5: U124.Google Scholar
  13. 13.
    Shen, B., Zhou, Y. G., Chen, Z. Z. et al., Growth of wurtzite GaN films on α-Al2O3 substrates using light-radiation heating metal-organic chemical vapor deposition, Appl. Phys. A, 1996, 68: 593.CrossRefADSGoogle Scholar
  14. 14.
    Xiao, R. F., Sun, X. W., Li, Z. F. et al., Growth of gallium nitride thin films by liquid-target pulsed laser deposition, J. Vac. Sci. Technol. A, 1997, 15(4): 2207.CrossRefADSGoogle Scholar

Copyright information

© Science in China Press 2003

Authors and Affiliations

  • Zhaoxia Bi
    • 1
  • Rong Zhang
    • 1
  • Weiping Li
    • 1
  • Xusheng Wang
    • 1
  • Shulin Gu
    • 1
  • Bo Shen
    • 1
  • Yi Shi
    • 1
  • Zhiguo Liu
    • 1
  • Youdou Zheng
    • 1
  1. 1.National Laboratory of Solid State Microstructures and Department of PhysicsNanjing UniversityNanjingChina

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