Science in China Series A: Mathematics

, Volume 45, Issue 6, pp 778–782 | Cite as

Effects of CZSi furnace modification on density of grown-in defects

  • Bingyan Ren
  • Zhicheng Zhang
  • Caichi Liu
  • Qiuyan Hao
  • Meng Wang


During large diameter Czochralski silicon growth, heat zone and argon flow influence the formation of defects in silicon crystal by changing the distribution of temperature. Different silicon crystals with various density of grown-in defects were grown by replacing the popular heater with the composite heater and changing the popular argon flow into a controlled flow. The experimental results have been explained well by the numeric simulation of argon flow.


CZSi grown-in defects heat zone argon flow numeric simulation 


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Copyright information

© Science in China Press 2002

Authors and Affiliations

  • Bingyan Ren
    • 1
  • Zhicheng Zhang
    • 1
  • Caichi Liu
    • 1
  • Qiuyan Hao
    • 1
  • Meng Wang
    • 1
  1. 1.Semiconductor Materials Research InstituteHebei University of TechnologyTianjinChina

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