Research on Chemical Intermediates

, Volume 28, Issue 5, pp 493–503 | Cite as

Oxygen dependence of NO adsorption on Hollandite-type KxGaxSn8–xO16 thin film

  • Kenjiro Fujimoto
  • Jun Suzuki
  • Masaru Harada
  • Satoshi Awatsu
  • Toshiyuki Mori
  • Mamoru Watanabe
Article

Abstract

Thin films of hollandite-type K1.9Ga1.9Sn6.1O16 (KGSO) were prepared by a spin-coating method. The films were colorless and transparent, 100-150 nm thick, and consisted of KGSO fine particles of about 20 nm in average size. The adsorption behavior of NO on the KGSO surface was examined by diffuse reflectance infrared fourier transform (DRIFTS). The KGSO was preheated at 968 K in a gas mixture of N2 and O2 prior to NO adsorption. As the oxygen ratio in the gas mixture increased up to 40%, absorption bands emerged and became stronger around 1400 cm-1. Those bands were assigned to NO2 species in chelating and nitrito form. It was found that the coexistence of oxygen remarkably improves the adsorption ability of NO on KGSO surface.

Keywords

Oxygen Physical Chemistry Fourier Thin Film Fourier Transform 

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Copyright information

© VSP 2002 2002

Authors and Affiliations

  • Kenjiro Fujimoto
  • Jun Suzuki
  • Masaru Harada
  • Satoshi Awatsu
  • Toshiyuki Mori
  • Mamoru Watanabe

There are no affiliations available

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