The European Physical Journal Special Topics

, Volume 153, Issue 1, pp 199–202 | Cite as

Characterization of optical properties of Porous Silicon using Photoacoustic Technique

  • S. Abdallah
  • T. A. El-Brolossy
  • S. Negm
  • H. Talaat
Article

Abstract.

Photoacoustic absorption spectra of the porous silicon samples (P-Si) of different thickness and porosity percentage were measured at different modulation frequency. The absorption edge of the P-Si layer for all samples shows a blue shift from that of crystalline silicon (C-Si) at 1.1 eV. At low modulation frequency the estimated energy gap (1.88 eV) is almost the same for all samples and the PA signal increases as the porosity percentage increases. At the higher modulation frequency, the spectra show an increase in the energy gap indicating the effect of quantum confinement as the porosity increasing. The Raman shifts of the P-Si samples are correlated with the particle size leading to an estimated average particle size. The quantum confinement interpretation of the PA results is in agreement with the Raman measurements that indicate the presence of such nanostructure in the P-Si layer.

Keywords

Porous Silicon European Physical Journal Special Topic Porous Layer Raman Shift Raman Measurement 

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Copyright information

© EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2008

Authors and Affiliations

  • S. Abdallah
    • 1
  • T. A. El-Brolossy
    • 2
  • S. Negm
    • 1
  • H. Talaat
    • 2
  1. 1.Department of Physics and MathematicsFaculty of Engineering, (Shoubra), Benha UniversityCairoEgypt
  2. 2.Physics DepartmentFaculty of Science, Ain Shams UniversityAbbsssia CairoEgypt

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