Conduction properties of extended defect states in Dirac materials


We demonstrate the existence of localized states in close vicinity of a linear defect in graphene. These states have insulating or conducting character. Insulating states form a flat band, while conducting states present a slowdown of the group velocity which is not originated by many-body interactions and it is controlled by the interface properties. For appropriate boundary conditions, the conducting states exhibit momentum-valley locking and protection from backscattering effects. These findings provide a contribution to the recent discussion on the origin of correlated phases in graphene.

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Fig. 1


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    Throughout this work, symbols \( {\mathbb{I}} \) and \( \sigma_{x,y,z} \) are used to indicate the \( 2 \times 2 \) identity matrix and the Pauli matrices, respectively. The symbol \( \otimes \) is used to indicate the Kronecker product of matrices. The notation \( p_{x} = - i\hbar \partial_{x} \) and \( p_{y} = - i\hbar \partial_{y} \) is introduced for quantum operators associated with the linear momentum components. Complex conjugation operator is denoted by \( {\mathcal{K}} \), while \( A^{t} \) denotes the transpose of \( A \).


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Discussions with R. De Luca and M. Salerno are gratefully acknowledged. This research did not receive any specific grant from funding agencies in the public, commercial or not-for-profit sectors.

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Correspondence to Francesco Romeo.

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Romeo, F. Conduction properties of extended defect states in Dirac materials. Eur. Phys. J. Plus 135, 446 (2020).

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