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Radiation emission by electrons channeling in bent silicon crystals

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Abstract

Results of numerical simulations of electron channeling and emission spectra are reported for straight and uniformly bent silicon crystals. The projectile trajectories are computed using the newly developed module [G.B. Sushko, V.G. Bezchastnov, I.A. Solov’yov, A.V. Korol, W. Greiner, A.V. Solov’yov, J. Comput. Phys. 252, 404 (2013)] of the MBN Explorer packageb [I.A. Solov’yov, A.V. Yakubovich, P.V. Nikolaev, I. Volkovets, A.V. Solov’yov, J. Comput. Chem. 33, 2412 (2013)]. The electron channeling along Si(110) crystallographic planes is studied for the projectile energy 855 MeV.

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Authors and Affiliations

  1. St. Petersburg State Polytechnical University, Politechnicheskaya 29, 195251, St. Petersburg, Russia

    Roman G. Polozkov & Vadim K. Ivanov

  2. Department of Physics, Goethe University, Max-von-Laue-Str. 1, 60438, Frankfurt am Main, Germany

    Gennady B. Sushko, Andrei V. Korol & Andrey V. Solov’yov

  3. St. Petersburg State Maritime University, Leninsky Ave. 101, 198262, St. Petersburg, Russia

    Andrei V. Korol

Authors
  1. Roman G. Polozkov
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  2. Vadim K. Ivanov
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  3. Gennady B. Sushko
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  4. Andrei V. Korol
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  5. Andrey V. Solov’yov
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Correspondence to Vadim K. Ivanov.

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Polozkov, R.G., Ivanov, V.K., Sushko, G.B. et al. Radiation emission by electrons channeling in bent silicon crystals. Eur. Phys. J. D 68, 268 (2014). https://doi.org/10.1140/epjd/e2014-50229-9

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