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Investigation of the SiC thin films synthetized by Thermionic Vacuum Arc method (TVA)

  • V. Ciupina
  • R. Vladoiu
  • C. P. Lungu
  • V. Dinca
  • M. Contulov
  • A. Mandes
  • P. Popov
  • G. Prodan
Regular Article

Abstract

Thermionic Vacuum Arc method (TVA) was used for the first time to prepare SiC thin films. This method is very suitable for deposition of high purity thin films with compact structure and extremely smooth in vacuum conditions. The nanocomposites were investigated using Transmission Electron Microscopy (TEM) analyses provided with HR-TEM and SAED facilities. The structure of the films can be indexed as following three forms: cubic structure of SiC (F4-3m) a = 0.4348 nm, cubic Si (Fd3m) a = 0.54307 nm and graphite (P63/mmc) a = 0.2456 nm; c = 0.6696 nm. The morphology, topography, wettability and wear properties were also performed by SEE system and by Raman Spectroscopy, increasing the interest for emerging applications.

Keywords

Plasma Physics 

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Copyright information

© EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  • V. Ciupina
    • 1
  • R. Vladoiu
    • 1
  • C. P. Lungu
    • 2
  • V. Dinca
    • 1
  • M. Contulov
    • 1
  • A. Mandes
    • 1
  • P. Popov
    • 1
  • G. Prodan
    • 1
  1. 1.Department of PhysicsOvidius UniversityConstantaRomania
  2. 2.National Institute for Lasers, Plasma and Radiation PhysicsBucharestRomania

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