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Second-order optical susceptibility in doped III-V piezoelectric semiconductors in the presence of a magnetostatic field

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Abstract.

A detailed analytical investigation of second-order optical susceptibility has been made in moderately doped III-V weakly piezoelectric semiconductor crystal, viz. n-InSb, in the absence and presence of an external magnetostatic field, using the coupled mode theory. The second-order optical susceptibility arises from the nonlinear interaction of a pump beam with internally generated density and acoustic perturbations. The effect of doping concentration, magnetostatic field and pump intensity on second-order optical susceptibility of III-V semiconductors has been studied in detail. The numerical estimates are made for n-type InSb crystals duly shined by pulsed 10.6 μm CO2 laser and efforts are made towards optimising the doping level, applied magnetostatic field and pump intensity to achieve a large value of second-order optical susceptibility and change of its sign. The enhancement in magnitude and change of sign of second-order optical susceptibility, in weakly piezoelectric III-V semiconductor under proper selection of doping concentration and externally applied magnetostatic field, confirms the chosen nonlinear medium as a potential candidate material for the fabrication of nonlinear optical devices. In particular, at B 0 = 14.1 T, the second-order susceptibility was found to be 3.4 × 10-7 (SI unit) near the resonance condition.

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Authors and Affiliations

  1. Department of Physics, Chaudhary Devi Lal University, 125055, Sirsa, India

    B. Lal, P. Aghamkar & S. Kumar

  2. Department of Physics, Government Polytechnic for Women, 125055, Sirsa, India

    B. Lal

  3. Department of Physics, Kurukshetra University, 136119, Kurukshetra, India

    M. K. Kashyap

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  1. B. Lal
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  2. P. Aghamkar
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  3. S. Kumar
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  4. M. K. Kashyap
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Lal, B., Aghamkar, P., Kumar, S. et al. Second-order optical susceptibility in doped III-V piezoelectric semiconductors in the presence of a magnetostatic field. Eur. Phys. J. D 61, 717–724 (2011). https://doi.org/10.1140/epjd/e2010-10455-9

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