In this article we report comprehensive calculations of
total elastic (Qel), and total ionization cross sections, (Qion), on
silicon hydrides SiHx (x = 1–4) and disilane, Si2H6 on electron
impact at energies from circa threshold to 2000 eV and total (complete)
cross sections (QT) up to 5 keV. Spherical complex optical potential
(SCOP) formalism is employed to evaluate Qel and QT. Total
ionization cross sections, Qion, are derived from total inelastic cross
sections, Qinel, using our complex spherical potential – ionization
contribution (CSP-ic) method. Dependence of QT on the dipole
polarizability of the target and incident energy is presented for these
targets through analytical formula, using which calculation of QT is
extended up to 5 keV. Comparison of QT for all these targets is carried
out to present a general theoretical picture of collision processes and also
to visualize the dependence of QT on the total number of electrons in
the target and hence on the geometrical size of the target. Present
calculations also provide information on the excitation processes of these
targets. Present results are compared with available experimental and other
theoretical data wherever available and overall good agreement is observed.
There is probably no data for total elastic and total (complete) cross
sections for SiHx (x = 2-3) in the present energy range and hence
reported for the first time.
34.80.Bm Elastic scattering of electrons by atoms and molecules 34.80.Gs Molecular excitation and ionization by electron impact
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