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Temperature dependence of photoluminescence from mono-dispersed Si nanoparticles

  • T. Orii
  • M. Hirasawa
  • T. Seto
  • N. Aya
  • S. Onari

Abstract.

The temperature dependence of photoluminescence (PL) from mono-dispersed Si nanoparticles was studied from 4 to 300 K. Si nanoparticles produced by pulsed laser ablation in He background gas were sorted into the 6 nm size range by a differential mobility analyzer (DMA). The spread of the size distribution was narrowed to a geometrical standard deviation σg = 1.05. On decreasing the temperature from 300 to 4 K, the intensity of the PL spectra increased gradually, peaked at about 60 K, and then decreased rapidly. The temperature dependences of the intensity and the full width at half maximum (FWHM) on the PL spectra are discussed in terms of radiative and nonradiative decay rates.

PACS.

61.46.+w Nanoscale materials: clusters, nanoparticules, nanotubes, and nanocrystals 78.55.Ap Elemental semiconductors 81.07.Bc Nanocrystalline materials 

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Copyright information

© EDP Sciences, Springer-Verlag, Società Italiana di Fisica 2003

Authors and Affiliations

  • T. Orii
    • 1
  • M. Hirasawa
    • 1
  • T. Seto
    • 1
  • N. Aya
    • 1
  • S. Onari
    • 2
  1. 1.Research Center for Advanced Manufacturing on Nanoscale Science and EngineeringNational Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 NamikiTsukubaIbaraki 305-8564, Japan
  2. 2.Institute of Materials ScienceUniversity of TsukubaTsukubaIbaraki 305-8573, Japan

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