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2D Hexagonal SnTe monolayer: a quasi direct band gap semiconductor with strain sensitive electronic and optical properties

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An Erratum to this article was published on 06 July 2020

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Abstract

The stability and electronic and optical properties of two-dimensional (2D) SnTe monolayer has been systematically studied by using first-principles calculations based on density functional theory. Our computations demonstrate that the predicted 2D SnTe monolayer is a stable quasi-direct semiconductor. Also, analysis of its electronic property shows that the ground state of this monolayer is a quasi-direct semiconductor with a band gap of ~2.00. This band gap can be effectively modulated by external strains. Investigation of optical properties shows that monolayer SnTe exhibits significant absorption and reflectivity in the ultraviolet region of the electromagnetic spectrum.

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Change history

  • 06 July 2020

    The fourth author���s name, Shorin Amirian, in the published article was wrong. It has been corrected to Shirin Amirian.

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Author information

Authors and Affiliations

  1. Department of Physics, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran

    Negin Fatahi, Shorin Amirian & Mosayeb Naseri

  2. Computational Laboratory for Advanced Materials and Structures, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam

    D. M. Hoat

  3. Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City, Vietnam

    D. M. Hoat

  4. Department, College of Science, King Saud University, Riyadh, Saudi Arabia

    Amel Laref

  5. Physics Department, College of Science, Basrah University, Basrah, Iraq

    A. H. Reshak

  6. Nanotechnology and Catalysis Research Center (NANOCAT), University of Malaya, Kuala Lumpur, 50603, Malaysia

    A. H. Reshak

  7. Department of Instrumentation and Control Engineering, Faculty of Mechanical Engineering, CTU in Prague, Technicka 4, Prague, 6 166 07, Czech Republic

    A. H. Reshak

Authors
  1. Negin Fatahi
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  2. D. M. Hoat
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  3. Amel Laref
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  4. Shorin Amirian
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  5. A. H. Reshak
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  6. Mosayeb Naseri
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Correspondence to D. M. Hoat.

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Fatahi, N., Hoat, D.M., Laref, A. et al. 2D Hexagonal SnTe monolayer: a quasi direct band gap semiconductor with strain sensitive electronic and optical properties. Eur. Phys. J. B 93, 32 (2020). https://doi.org/10.1140/epjb/e2020-100543-6

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  • DOI: https://doi.org/10.1140/epjb/e2020-100543-6

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