Linear ac transport in square-shaped graphene nanoconstriction devices

  • En-Jia Ye
  • Jin Lan
  • Yi-Jian Shi
  • Chengliang Zhang
  • Haifeng Shi
  • Xuean Zhao
Regular Article
  • 92 Downloads

Abstract

The linear ac transport of square-shaped graphene nanoconstriction devices are investigated, employing Büttiker’s ac transport theory. Based on Green’s function, the dynamic conductances taking account of both dc and ac contributions are presented. The square-shaped graphene nanoconstriction device displays semiconducting and resonance features in the transporting channels. The device responds capacitively or inductively to the external ac perturbations depending on the dynamic processes of the internal charges at the central nanoconstriction region. We show that as a result of the coupling and the band-mixing between the leads and the central constriction, the ac transport properties are sensitive to the geometry of the graphene systems.

Keywords

Mesoscopic and Nanoscale Systems 

References

  1. 1.
    A.N. Andriotis, E. Richter, M. Menon, Appl. Phys. Lett. 91, 152105 (2007)CrossRefADSGoogle Scholar
  2. 2.
    G. Naumis, M. Terrones, H. Terrones, L. Gaggero-Sager, Appl. Phys. Lett. 95, 182104 (2009)CrossRefADSGoogle Scholar
  3. 3.
    Q.F. Sun, X. Xie, Phys. Rev. Lett. 104, 066805 (2010)CrossRefADSGoogle Scholar
  4. 4.
    W.T. Zheng, C.Q. Sun, Energy Environ. Sci. 4, 627 (2011)CrossRefGoogle Scholar
  5. 5.
    A.K. Geim, K.S. Novoselov, Nat. Mater. 6, 183 (2007)CrossRefADSGoogle Scholar
  6. 6.
    N.M.R. Peres, R.M. Ribeiro, New J. Phys. 11, 095002 (2009)CrossRefADSGoogle Scholar
  7. 7.
    A.H.C. Neto, F. Guinea, N.M.R. Peres, K.S. Novoselov, A.K. Geim, Rev. Mod. Phys. 81, 109 (2009)CrossRefADSGoogle Scholar
  8. 8.
    S.M.M. Dubois, Z. Zanolli, X. Declerck, J.C. Charlier, Eur. Phys. J. B 72, 1 (2009)CrossRefADSGoogle Scholar
  9. 9.
    K. Wakabayashi, Y. Takane, M. Yamamoto, M. Sigrist, New J. Phys. 11, 095016 (2009)CrossRefADSGoogle Scholar
  10. 10.
    F. Muñoz-Rojas, D. Jacob, J. Fernández-Rossier, J.J. Palacios, Phys. Rev. B 74, 195417 (2006)CrossRefADSGoogle Scholar
  11. 11.
    T. Jayasekera, J.W. Mintmire, Nanotechnology 18, 424033 (2007)CrossRefADSGoogle Scholar
  12. 12.
    E.J. Ye, W.Q. Sui, X. Zhao, Appl. Phys. Lett. 100, 193303 (2012)CrossRefADSGoogle Scholar
  13. 13.
    A. Jellal, M. Mekkaoui, E.B. Choubabi, H. Bahlouli, Eur. Phys. J. B 87, 123 (2014)CrossRefADSMathSciNetGoogle Scholar
  14. 14.
    B. Özyilmaz, P. Jarillo-Herrero, D. Efetov, P. Kim, Appl. Phys. Lett. 91, 192107 (2007)CrossRefADSGoogle Scholar
  15. 15.
    T. Low, S. Hong, J. Appenzeller, S. Datta, M.S. Lundstrom, IEEE Trans. Electron Devices 56, 1292 (2009)CrossRefADSGoogle Scholar
  16. 16.
    M. Yamamoto, K. Wakabayashi, Appl. Phys. Lett. 95, 082109 (2009)CrossRefADSGoogle Scholar
  17. 17.
    H.Q. Yin, W. Li, X. Hu, R. Tao, J. Appl. Phys. 107, 103706 (2010)CrossRefADSGoogle Scholar
  18. 18.
    X. Zhang, Eur. Phys. J. B 85, 228 (2012)CrossRefADSGoogle Scholar
  19. 19.
    J. Lan, E.J. Ye, W.Q. Sui, X. Zhao, Phys. Chem. Chem. Phys. 15, 671 (2013)CrossRefGoogle Scholar
  20. 20.
    A. Girdhar, C. Sathe, K. Schulten, J.P. Leburton, Proc. Natl. Acad. Sci. 110, 16748 (2013)CrossRefADSGoogle Scholar
  21. 21.
    H.Y. Deng, K. Wakabayashi, C.H. Lam, Phys. Rev. B 89, 045423 (2014)CrossRefADSGoogle Scholar
  22. 22.
    M. Büttiker, J. Phys.: Condens. Matter 5, 9361 (1993)ADSGoogle Scholar
  23. 23.
    M. Büttiker, H. Thomas, A. Prêtre, Z. Phys. B 94, 133 (1994)CrossRefADSGoogle Scholar
  24. 24.
    V. Gasparian, T. Christen, M. Büttiker, Phys. Rev. A 54, 4022 (1996)CrossRefADSGoogle Scholar
  25. 25.
    F. Sols, M. Macucci, U. Ravaioli, K. Hess, Appl. Phys. Lett. 54, 350 (1989)CrossRefADSGoogle Scholar
  26. 26.
    S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, 1997)Google Scholar
  27. 27.
    T. Gramespacher, M. Büttiker, Phys. Rev. B 56, 13026 (1997)CrossRefADSGoogle Scholar
  28. 28.
    J. Wang, H. Guo, Phys. Rev. B 54, R11090 (1996)CrossRefADSGoogle Scholar
  29. 29.
    M. Büttiker, Phys. Rev. B 27, 6178 (1983)CrossRefADSGoogle Scholar
  30. 30.
    J. Wang, Y. Wang, H. Guo, Appl. Phys. Lett. 65, 1793 (1994)CrossRefADSGoogle Scholar
  31. 31.
    R. Landauer, IBM J. Res. Dev. 1, 223 (1957)CrossRefMathSciNetGoogle Scholar
  32. 32.
    A. Prêtre, H. Thomas, M. Büttiker, Phys. Rev. B 54, 8130 (1996)CrossRefADSGoogle Scholar

Copyright information

© EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2015

Authors and Affiliations

  • En-Jia Ye
    • 1
  • Jin Lan
    • 2
  • Yi-Jian Shi
    • 2
  • Chengliang Zhang
    • 1
  • Haifeng Shi
    • 1
  • Xuean Zhao
    • 3
  1. 1.School of ScienceJiangnan UniversityWuxiP.R. China
  2. 2.Zhejiang-California International Nanosystem Institute, Electronic DepartmentZhejiang UniversityHangzhouP.R. China
  3. 3.Zhejiang Institute of Modern Physics, Department of PhysicsZhejiang UniversityHangzhouP.R. China

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