Enhanced thermopower of gated silicene

Regular Article

Abstract

We theoretically investigate the thermopower of silicene systems in an external electric field perpendicular to the silicene sheet. In the absence of the field, we estimate that the thermopower of pure silicene is of order ∼80 μV/K. When a finite field is applied, a comparatively big band gap is opened and the thermopower is thus enhanced by several times as compared with the case without the field. The effect of disorder is also studied, and we find only minimal difference.

Keywords

Solid State and Materials 

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Copyright information

© EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  1. 1.Department of PhysicsShaoxing UniversityShaoxingP.R. China
  2. 2.Department of Mathematics and PhysicsShanghai University of Electric PowerShanghaiP.R. China
  3. 3.Key Laboratory for Advanced Microstructure Materials of the Ministry of Education and Department of PhysicsTongji UniversityShanghaiP.R. China

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