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Enhanced thermopower of gated silicene

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Abstract

We theoretically investigate the thermopower of silicene systems in an external electric field perpendicular to the silicene sheet. In the absence of the field, we estimate that the thermopower of pure silicene is of order ∼80 μV/K. When a finite field is applied, a comparatively big band gap is opened and the thermopower is thus enhanced by several times as compared with the case without the field. The effect of disorder is also studied, and we find only minimal difference.

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Article Open access 13 March 2015

Feng Pan, Yangyang Wang, … Jing Lu

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Authors and Affiliations

  1. Department of Physics, Shaoxing University, Shaoxing, 312000, P.R. China

    Yonghong Yan & Haifei Wu

  2. Department of Mathematics and Physics, Shanghai University of Electric Power, Shanghai, 200090, P.R. China

    Feng Jiang

  3. Key Laboratory for Advanced Microstructure Materials of the Ministry of Education and Department of Physics, Tongji University, Shanghai, 200092, P.R. China

    Hui Zhao

Authors
  1. Yonghong Yan
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  2. Haifei Wu
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  3. Feng Jiang
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  4. Hui Zhao
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Correspondence to Yonghong Yan.

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Yan, Y., Wu, H., Jiang, F. et al. Enhanced thermopower of gated silicene. Eur. Phys. J. B 86, 457 (2013). https://doi.org/10.1140/epjb/e2013-40818-3

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  • DOI: https://doi.org/10.1140/epjb/e2013-40818-3

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