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The European Physical Journal B

, Volume 75, Issue 1, pp 31–35 | Cite as

Edge states of epitaxially grown graphene on 4H-SiC(0001) studied by scanning tunneling microscopy

  • M. Ye
  • Y. T. Cui
  • Y. Nishimura
  • Y. Yamada
  • S. Qiao
  • A. Kimura
  • M. Nakatake
  • H. Namatame
  • M. Taniguchi
Regular Article

Abstract

The edge properties of single layer graphene epitaxially grown on partially graphitized 4H-SiC(0001) surface have been investigated with scanning tunneling microscopy (STM). We directly observed the atomic-structure dependency of the super structures in the vicinity of armchair and zigzag edges due to the different kinds of symmetry-breaking at those two edges.

Keywords

Scanning Tunneling Microscopy Edge State Scanning Tunneling Microscopy Image Step Edge Single Layer Graphene 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2010

Authors and Affiliations

  • M. Ye
    • 1
  • Y. T. Cui
    • 2
  • Y. Nishimura
    • 1
  • Y. Yamada
    • 1
  • S. Qiao
    • 3
  • A. Kimura
    • 1
  • M. Nakatake
    • 2
  • H. Namatame
    • 2
  • M. Taniguchi
    • 1
    • 2
  1. 1.Graduate School of Science, Hiroshima UniversityHigashi-HiroshimaJapan
  2. 2.Hiroshima Synchrotron Radiation Center, Hiroshima UniversityHigashi-HiroshimaJapan
  3. 3.Department of PhysicsLaboratory of Advanced Materials, and Surface Physics Laboratory (National Key Laboratory), Fudan UniversityShanghaiP.R. China

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