The European Physical Journal B

, Volume 73, Issue 2, pp 207–210 | Cite as

Current fluctuations in polystyrene nano-compounds

  • R. Scaldaferri
  • C. Bonavolontà
  • G. P. Pepe
  • G. Salzillo
  • A. Borriello
  • I. Pedaci
Mesoscopic and Nanoscale Systems
  • 50 Downloads

Abstract

The current fluctuations in a polystyrene matrix (PS) doped by gold nanoparticles (Au-NPs) and small conjugated molecules of 8-hydroxyquinoline (8HQ) have been characterized. The electrical properties of the PS composite allow using it as a responsive layer in non-volatile memory devices due to its switching capability between two well separated conducting states. The analysis of current fluctuations at fixed bias voltages showed the presence of two states in charge carrier transport regardless of the operating conducting state of the device. Moreover, noise spectra have been investigated in the low frequency region, allowing the estimation of charge relaxation times between current levels in the two memory states. The presence of these slow and large fluctuations can seriously affect the final electrical performances of this class of nanostructured memories.

Keywords

Gold Nanoparticles Bias Voltage Resistance Switch Charge Carrier Transport Occupancy Probability 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    L.D. Bozano, B.W. Kean, M. Beinhoff, K.R. Carter, P.M. Rice, J. Campbell Scott, Adv. Funct. Mat. 15, 1933 (2005)CrossRefGoogle Scholar
  2. 2.
    A. Kanwal, M. Chhowalla, Appl. Phys. Lett. 89, 203103 (2004)CrossRefADSGoogle Scholar
  3. 3.
    R. Scaldaferri, G.P. Pepe, G. Salzillo, A. Borriello, L. Fusco, M. Barra, V. Pagliarulo, AIP Conference Proceedings 1042, 228 (2008)CrossRefADSGoogle Scholar
  4. 4.
    R. Scaldaferri, G.P. Pepe, G. Salzillo, A. Borriello, L. Fusco, M. Barra, V. Pagliarulo, accepted for publication in EPJ BGoogle Scholar
  5. 5.
    J. Ouyang, C.-W. Chu, C.R. Szmanda, L. Ma, Y. Yang, Nat. Mat. 3, 918 (2004)CrossRefGoogle Scholar
  6. 6.
    A. Prakash, J. Ouyang, J. Lin, Y. Yang, J. Appl. Phys. 100, 054309l (2006)CrossRefADSGoogle Scholar
  7. 7.
    M. Lauters, B. McCarthy, D. Sarid, G.E. Jabbour, Appl. Phys. Lett. 89, 013507 (2006)CrossRefADSGoogle Scholar
  8. 8.
    T. Aoki, Y. Nishikawa, M. Kuwata-Gonokami, Appl. Phys. Lett. 78, 1065 (2001)CrossRefADSGoogle Scholar
  9. 9.
    A. Bezryadin, C. Dekker, G. Schmid, Appl. Phys. Lett. 71, 127 (1997)CrossRefGoogle Scholar
  10. 10.
    L. Forbes, D.A. Miller, Appl. Phys. Lett. 93, 043517 (2008)CrossRefADSGoogle Scholar
  11. 11.
    M.J. Hostetler et al., Langmuir 14, 17 (1998)CrossRefGoogle Scholar
  12. 12.
    J. Ouyang, C. Chu, R.J. Tseng, A. Prakash, Y. Yang, Proc. IEEE 93, 1287 (2005)CrossRefGoogle Scholar
  13. 13.
    A. Avellan, W. Krautschneider, S. Schwantes, Appl. Phys. Lett. 78, 2790 (2001)CrossRefADSGoogle Scholar
  14. 14.
    T.M. Buehler, D.J. Reilly, R.P. Starrett, V.C. Chan, A.R. Hamilton, A.S. Dzurak, R.G. Clark, J. Appl. Phys. 96, 6827A (2004)CrossRefADSGoogle Scholar
  15. 15.
    P. Welch, IEEE Trans. Audio Electroacoust. 15, 70 (1967)CrossRefMathSciNetADSGoogle Scholar
  16. 16.
    Sh Kogan, Electronic noise and fluctuations in solids (Cambridge University Press, 1996)Google Scholar
  17. 17.
    A.L. McWhorter, Semiconductor Surface Physic (Philadelphia, University of Pennsylvania Press, 1957), pp. 207–228Google Scholar
  18. 18.
    W.L. Leong, N. Matehews, S.G. Mhasalkar, T.P. Chen, Appl. Phys. Lett. 93, 222908 (2008)CrossRefADSGoogle Scholar
  19. 19.
    W.L. Leong, P.S. Lee, A. Lohani, Y.M. Lam, T. Chen, S. Zhang, A. Dodabalapur, S.G. Mhaisalkar, Adv. Mater. 20, 2325 (2008)CrossRefGoogle Scholar

Copyright information

© EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2009

Authors and Affiliations

  • R. Scaldaferri
    • 1
  • C. Bonavolontà
    • 2
  • G. P. Pepe
    • 2
  • G. Salzillo
    • 1
  • A. Borriello
    • 3
  • I. Pedaci
    • 1
  1. 1.STMicroelectronics, Post Silicon Technology GroupPorticiItaly
  2. 2.CNR-INFM.- Coherentia and Department of Physics, University of Naples Federico IINaplesItaly
  3. 3.Institute of Composite and Biomedical Materials, CNRNapoliItaly

Personalised recommendations