The European Physical Journal B

, Volume 69, Issue 2, pp 211–218 | Cite as

Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations

Solid State and Materials

Abstract

The aim of this work is to examine the effect of dilute nitride and/or antimonite on the critical layer thickness of GaInAs quantum wells on GaAs and InP substrates by means of Matthews and Blakeslee force model. The study provides a comparison of the critical layer thickness of the related GaIn(N)As(Sb) QWs in (001) and (111) orientation. Our calculations indicate the importance of antimonite and the proper usage of it with dilute nitrides in order to tailor the active layer thickness and emission wavelength of quantum well laser devices.

PACS

73.21.Fg Quantum wells 73.61.Ey III-V semiconductors 42.55.Px Semiconductor lasers; laser diodes 42.60.Mi Dynamical laser instabilities; noisy laser behavior 

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Copyright information

© EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2009

Authors and Affiliations

  1. 1.Department of Engineering PhysicsUniversity of GaziantepGaziantepTurkey
  2. 2.Faculty of Arts and Sciences University of Kilis 7Aralık, KilisTurkey

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