Temperature dependence of photoluminescence in amorphous Si1-xCx:H films
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We have investigated the temperature dependence of photoluminescence in hydrogenated amorphous silicon-carbon alloys a-Si1-xCx:H prepared by glow discharge in the low-power regime. The radiative recombination process, due to photocarriers trapped on band-edge states, is in competition with the thermal escape of the photocarriers into the mobility bands. The model gives a quantitative fit with experiment, without any adjustable parameter, provided the width of the band-edge distribution of states is taken as the width of the conduction band only (measured by “photo-induced infra-red spectroscopy”) and not as the Urbach energy, as it is usually assumed.
PACS.72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping 78.55.Qr Amorphous materials; glasses and other disordered solids 81.05.Gc Amorphous semiconductors
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- J. Bullot, M.P. Schmidt, Phys. Status Solidi (b) 143, 345 (1987) Google Scholar
- R. A. Street, Hydrogenated amorphous silicon (Cambridge Solid State Science Series, Cambridge, UK, 1991) Google Scholar
- T. Muschik, R. Schwartz, J. Non-Cryst. Solids 164–166, 619 (1993) Google Scholar
- The corresponding transition temperature for holes is expected to be nearly twice as large, but is unimportant for the luminescence intensity which is limited by electron detrapping as explained in the previous section Google Scholar