Advertisement

Multiple-frequency current oscillations in GaAs-AlGaAs quantum wells containing a thin semi-insulating layer

  • Z. H. Dai
  • J. Ni
Mesoscopic Physics
  • 40 Downloads

Abstract.

We have investigated non-equilibrium electron transport properties of a quantum well with an inserted thin semi-insulating potential barrier layer in nonlinear bias using a time-dependent simulation technique. We find that the charge redistribution with time in the whole structure has an important effect on the final current-voltage (I-V) curves. The results show that there are two evident current hysteresis phenomena in the negative differential conductance regions and the inserted semi-insulating potential barrier layer induces the formation of multiple emitter quantum wells, which leads to high-frequency terahertz current oscillations with multiple-frequency relations around the valley of current.

Keywords

Neural Network Electron Transport Nonlinear Dynamics Transport Property Simulation Technique 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. A.D. Martin, M.L.F. Lerch, P.E. Simmonds, L. Eaves, Appl. Phys. Lett. 64, 1248 (1994) CrossRefGoogle Scholar
  2. R.K. Kawakami, E. Rotenberg, H.J. Choi, E.J. Escorcia-Aparicio, M.O. Bowen, J.H. Wholfe, E. Arenholz, Z.D. Zhang, N.V. Smith, Z.Q. Qiu, Nature 398, 132 (1999) CrossRefGoogle Scholar
  3. D. Grundler, Phys. Rev. Lett. 84, 6074 (2000) CrossRefPubMedGoogle Scholar
  4. H.C. Liu, C.Y. Song, Z.R. Wasilewski et al., Phys. Rev. Lett. 90, 077402-1 (2003) CrossRefPubMedGoogle Scholar
  5. D. Snoke, S. Denev, Y. Liu, L. Pfeiffer, K. West, Nature 418, 754 (2002) CrossRefPubMedGoogle Scholar
  6. R. Gebauer, R. Car, Phys. Rev. B 70, 125324-1 (2004) CrossRefGoogle Scholar
  7. N. Tansu, J.Y. Yeh, L.J. Mawst, Appl. Phys. Lett. 83, 2112 (2003) CrossRefGoogle Scholar
  8. T. Ohtsuka, L. Schrottke, R. Hey, H. Kostial, H.T. Grahn, J. Appl. Phys 94, 2192 (2003) CrossRefGoogle Scholar
  9. H. Ikeda, M. Iwasaki, Y. Ishikawa, M. Tabe, Appl. Phys. Lett. 83, 1456 (2003) Google Scholar
  10. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, G. Abstreiter, Phys. Rev. B 64, 245334 (2001) CrossRefGoogle Scholar
  11. F. Pulizzi, E.E. Vdovin, K. Takehana, Yu.V. Dubrovskii, A. Patane, L. Eaves, M. Henini, P.N. Brunkov, G. Hill, Phys. Rev. B 68, 155315 (2003) CrossRefGoogle Scholar
  12. G.B. Galiev, V.E. Kaminskii, V.G. Mokerov, V.A. Kulbachinskii, R.A. Lunin, I.S. Vasilevskii, A.V. Derkach, Semiconductors 37, 686 (2003) CrossRefGoogle Scholar
  13. Z. Barticevic, P. Vargas, M. Pacheco, D. Altbir, Phys. Rev. B 68, 155306 (2003) Google Scholar
  14. P.M. Martin, S.A. Ahmad, F.W. Sheardt et al., Semicond. Sci. Technol. 9, 493 (1994) Google Scholar
  15. V.J. Goldman, D.C. Tsui, J.E. Cunningham, Phys. Rev. Lett. 58, 1256 (1987) CrossRefPubMedGoogle Scholar
  16. T.C.L.G. Sollner, Phys. Rev. Lett. 59, 1622 (1987) CrossRefPubMedGoogle Scholar
  17. K.L. Jensen, F.A. Buot, Phys. Rev. Lett. 66, 1079 (1991) Google Scholar
  18. Peiji Zhao, H.L. Cui, D.L. Woolard, Phys. Rev. B 63, 075302 (2001) CrossRefGoogle Scholar
  19. P.C. Main, T.J. Foster, P. Medonnell, L. Eaves, M.J. Gompertz, N. Mori, J.W. Sakai, M. Henini, Phys. Rev. B 62, 16721 (2000) CrossRefGoogle Scholar
  20. M. Roberts, Y.C. Chung, S. Lyapin, N.J. Mason, R.J. Nicholas, P.C. Klipstein, Phys. Rev. B 65, 235326 (2002) CrossRefGoogle Scholar
  21. L. Hirsch, A.S. Barriere, J. Appl. Phys 94, 5014 (2003) CrossRefGoogle Scholar
  22. G. Kim, D.W. Roh, S.W. Paek, Appl. Phys. Lett. 83, 695 (2003) CrossRefGoogle Scholar
  23. A. Yu. Serov, G.G. Zegrya, Appl. Phys. Lett. 86, 032108 (2005) CrossRefGoogle Scholar
  24. R.P. Zaccaria, F. Rossi, Phys. Rev. B 67, 113311 (2003) CrossRefGoogle Scholar
  25. Z. Dai, J. Ni, Eur. Phys. J. B 45 129 (2005) Google Scholar

Copyright information

© EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2005

Authors and Affiliations

  1. 1.Department of Physics and Key Laboratory of Atomic and Molecular Nanoscience, Tsinghua UniversityBeijingP.R. China
  2. 2.Department of PhysicsYantai UniversityYantaiP.R. China

Personalised recommendations