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Analytical result of the effect of spin scattering and impurity-assistance on magnetoresistance in doped magnetic tunneling junctions

  • Y.C. Tao
  • X.F. Jiang
  • J. Wang
  • D.Y. Xing
  • 39 Downloads

Abstract:

An extended tunneling Hamiltonian method is proposed to study the temperature-dependent tunneling magnetoresistance (TMR) in doped magnetic tunnel junctions. It is found that for nonmagnetic dopants (Si), impurity-assisted tunneling is mainly elastic, giving rise to a weak spin polarization, thereby reduces the overall TMR, while for magnetic ions (Ni), the collective excitation of local spins in δ-doped magnetic layer contributes to the severe drop of TMR and the behavior of the variation of TMR with temperature different from that for Si-doping. The theoretical results can reproduce the main characteristic features of experiments.

PACS. 75.70.Pa Giant magnetoresistance – 75.30.Ds Spin waves – 73.23.Hk Coulomb blockade; single-electron tunneling 

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Copyright information

© EDP Sciences, Springer-Verlag 2003

Authors and Affiliations

  • Y.C. Tao
    • 1
  • X.F. Jiang
    • 2
  • J. Wang
    • 2
  • D.Y. Xing
    • 2
  1. 1.Department of Physics, Nanjing Normal University, Nanjing 210097, PR ChinaCN
  2. 2.National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, PR ChinaCN

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