Photoreflectance investigation of hydrogenated (InGa)(AsN)/GaAs heterostructures

  • M. Geddo
  • R. Pezzuto
  • M. Capizzi
  • A. Polimeni
  • D. Gollub
  • M. Fischer
  • A. Forchel

Abstract:

The optical response of as grown and hydrogenated In0.32Ga0.68As1-yNy/GaAs single quantum wells (y = 0, 0.027) has been investigated from T = 80 K to room temperature by photoreflectance. Three excitonic spectral features detected in the N free sample shift to lower energy in the N containing sample and back to higher energy upon H irradiation of the N containing sample. In the hydrogenated sample, a progressive change with increasing temperature of the nature of the lowest energy transition from an excitonic to a band-to-band character has been explained in terms of an increasing release of carriers from traps formed by H and N clusters. A reduction in the oscillator strength of the lowest energy transition and an increase in the binding energy of the heavy-hole exciton have been explained in terms of an increase in the electron effective mass upon N introduction into the InxGa1-xAs lattice.

PACS. 78.66.Fd III-V semiconductors – 71.55.Eq III-V semiconductors – 78.40.-q Absorption and reflection spectra: visible and ultraviolet 

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Copyright information

© EDP Sciences, Springer-Verlag 2002

Authors and Affiliations

  • M. Geddo
    • 1
  • R. Pezzuto
    • 2
  • M. Capizzi
    • 3
  • A. Polimeni
    • 3
  • D. Gollub
    • 4
  • M. Fischer
    • 4
  • A. Forchel
    • 4
  1. 1.INFM-UdR Pavia, Via Bassi 6, 27100 Pavia and Dipartimento di Fisica della Università di Parma, Viale delle Scienze 7a, 43100 Parma, ItalyIT
  2. 2.INFM-Dipartimento di Fisica A. Volta, Università di Pavia, Via Bassi 6, 27100 Pavia, ItalyIT
  3. 3.INFM-Dipartimento di Fisica, Università di Roma, Piazzale A. Moro 2, 00182 Roma, ItalyIT
  4. 4.Universität Würzburg, Technische Physik, Am Hubland, 97074 Würzburg, GermanyDE

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