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Performance of n-on-p planar pixel sensors with active edges at high-luminosity environment

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Abstract

Future high-energy physics experiments require highly segmented silicon sensors of increased geometrical efficiency with the ability to withstand extremely high radiation damage. The performance of planar n-on-p sensors with active edges is simulated at high radiation fluences up to 1 × 1016 neq/cm2, using a three-level trap model for p-type silicon material. Taking advantage of the secondary ion mass spectrometry (SIMS) technique, an accurate representation of the structure was obtained in terms of doping profile. The breakdown voltage, leakage current, hole density and electric field distributions as well as the charge collection efficiency (CCE) are studied as a function of radiation fluence.

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    Groupe d’Etude de la Matière Condensée. Université Versailles-Saint Quentin en Yvelines.

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Acknowledgements

The authors would like to thank F. Jomard (GEMAC) and the LAL team for their contribution to the preparation of the samples and the SIMS measurement. The authors are also very grateful to ICOSI Lab and the University of Khenchela, Algeria, for providing the financial support.

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Correspondence to Djemouai Djamai.

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Djamai, D., Lounis, A., Gkougkousis, E. et al. Performance of n-on-p planar pixel sensors with active edges at high-luminosity environment. Eur. Phys. J. Plus 135, 101 (2020). https://doi.org/10.1140/epjp/s13360-020-00149-6

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