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Band gap modulation of graphene on SiC

  • Stefan KolevEmail author
  • Victor Atanasov
  • Hristiyan Aleksandrov
  • Teodor Milenov
Regular Article

Abstract

A recipe on how to engineer a band gap in the energy spectrum for the carriers in graphene is conveyed. It is supported by a series of numerical simulations inspired by an analytical result based on the opening of a band gap in periodically corrugated graphene, e.g. the buffer layer grown on SiC at high temperatures.

Keywords

Solid State and Materials 

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Copyright information

© EDP Sciences, SIF, Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Institute of Electronics–Bulgarian Academy of SciencesSofiaBulgaria
  2. 2.Faculty of Physics, Sofia UniversitySofiaBulgaria
  3. 3.Faculty of Chemistry and Pharmacy, Sofia UniversitySofiaBulgaria

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