Abstract
The formation of silicon–nitrogen nanolayers on the GaAs surface with orientations (100) and (110) by molecular layering in the temperature range of 423–773 K without activation and with activation of the process by a glow discharge at the stage of the ammonia supply is studied. The conditions for the growth of silicon nitride nanostructures and the layer mechanism of their formation are determined.
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Ezhovskii, Y.K., Mikhailovskii, S.V. Molecular Layering of Silicon Nitride Nanolayers with the Use of Ammonia Plasma. Inorg. Mater. Appl. Res. 12, 181–185 (2021). https://doi.org/10.1134/S2075113321010081
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DOI: https://doi.org/10.1134/S2075113321010081