Molecular Layering of Silicon Nitride Nanolayers with the Use of Ammonia Plasma

Abstract

The formation of silicon–nitrogen nanolayers on the GaAs surface with orientations (100) and (110) by molecular layering in the temperature range of 423–773 K without activation and with activation of the process by a glow discharge at the stage of the ammonia supply is studied. The conditions for the growth of silicon nitride nanostructures and the layer mechanism of their formation are determined.

This is a preview of subscription content, access via your institution.

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.

REFERENCES

  1. 1

    Ahvenniemi, E., Akbashev, A.R., Ali, S., et al., Review article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual project on the history of ALD,” J. Vac. Sci. Technol., A, 2017, vol. 35, no. 1, art. ID 010801.

    Article  Google Scholar 

  2. 2

    Ezhovskii, Yu.K. and Kholkin, V.Yu., Growth and properties of Al2O3 and SiO2 nanolayers on III–V semiconductors, Inorg. Mater., 2010, vol. 46, no. 1, pp. 38–42.

    CAS  Article  Google Scholar 

  3. 3

    Kääriäinen, T., Cameron, D., Kääriäinen, M.-L., and Sherman, A., Atomic Layer Deposition: Principles, Characteristics, and Nanotechnology Applications, Hoboken, NJ: Wiley, 2013, 2nd ed.

    Google Scholar 

  4. 4

    Gaskins, J.T., Hopkins, P.E., Merrill, D.R., et al., Review—investigation and review of the thermal, mechanical, electrical, optical, and structural properties of atomic layer deposited high-k dielectrics: beryllium oxide, aluminum oxide, hafnium oxide, and aluminum nitride, ECS J. Solid State Sci. Technol., 2017, vol. 6, no. 10, pp. N189– N208.

    CAS  Article  Google Scholar 

  5. 5

    Gougousi, T., Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces, Prog. Cryst. Growth Charact. Mater., 2016, vol. 62, no. 4, pp. 1–21.

    CAS  Article  Google Scholar 

  6. 6

    Ezhovskii, Yu.K., Molecular layering of silicon nitride nanolayers, Zh. Fiz. Khim., 2017, vol. 91, no. 7, pp. 1207–1210.

    Google Scholar 

  7. 7

    Gromov, V.K., Vvedenie v ellipsometriyu (Introduction to Ellipsometry), Leningrad: Leningr. Gos. Univ., 1986.

  8. 8

    Nefedov, V.I. and Cherepin, V.T., Fizicheskie metody issledovnaiya poverkhnosti tverdykh tel (Physical Methods of Studying Solid Surfaces), Moscow: Nauka, 1983.

  9. 9

    Nefedov, V.I., Rentgeno-elektronnaya spektroskopiya khimicheskikh soedninenii (X-Ray Electron Spectroscopy of Chemical Compounds), Moscow: Khimiya, 1984.

  10. 10

    Ezhovskii, Yu.K., Reactivity of solid surfaces in the chemical nanotechnology of low-dimensional systems, J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech., 2015, vol. 9, no. 3, pp. 462–467.

    CAS  Article  Google Scholar 

  11. 11

    Unuma, H., Yamamoto, M., Suzuki, Y., and Sakka, S., Ammonolysis of silica gels containing methyl groups, J. Non-Cryst. Solids, 1991, vol. 128, no. 3, pp. 223–230.

    CAS  Article  Google Scholar 

  12. 12

    Rubtsova, E.A. and Eremin, E.N., Heterogeneous catalytic effects in ammonia reactions in electrical discharges. I. Glow discharge, Zh. Fiz. Khim., 1968, vol. 42, no. 4, pp. 1022– 1026.

    CAS  Google Scholar 

  13. 13

    Rubtsova, E.A. and Eremin, E.N., Heterogeneous catalytic effects in ammonia reactions in electrical discharges. III. Barrier discharge, Zh. Fiz. Khim., 1971, vol. 45, no. 6, pp. 1499–1503.

    CAS  Google Scholar 

  14. 14

    Yi, Y., Zhang, R., Wang, L., Yan, J., et al., Plasma-triggered CH4/NH3 coupling reaction for direct synthesis of liquid nitrogen-containing organic chemicals, 2017, vol. 2, no. 12, pp. 9199–9210

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Yu. K. Ezhovskii.

Additional information

Translated by L. Mosina

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Ezhovskii, Y.K., Mikhailovskii, S.V. Molecular Layering of Silicon Nitride Nanolayers with the Use of Ammonia Plasma. Inorg. Mater. Appl. Res. 12, 181–185 (2021). https://doi.org/10.1134/S2075113321010081

Download citation

  • Keywords: molecular layering
  • atomic layer deposition
  • nanolayers
  • silicon nitride
  • ammonia plasma