Molecular Layering of Silicon Nitride Nanolayers with the Use of Ammonia Plasma


The formation of silicon–nitrogen nanolayers on the GaAs surface with orientations (100) and (110) by molecular layering in the temperature range of 423–773 K without activation and with activation of the process by a glow discharge at the stage of the ammonia supply is studied. The conditions for the growth of silicon nitride nanostructures and the layer mechanism of their formation are determined.

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Correspondence to Yu. K. Ezhovskii.

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Translated by L. Mosina

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Ezhovskii, Y.K., Mikhailovskii, S.V. Molecular Layering of Silicon Nitride Nanolayers with the Use of Ammonia Plasma. Inorg. Mater. Appl. Res. 12, 181–185 (2021).

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  • Keywords: molecular layering
  • atomic layer deposition
  • nanolayers
  • silicon nitride
  • ammonia plasma