Improvement of injection and radiation stability of nanosized dielectric films of MOS devices
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The conditions of injection-thermal treatment of metal-oxide-semiconductor (MOS) structures are studied. It is demonstrated that injection-thermal treatment (ITT) makes it possible to detect and eliminate structures with coarse defects of isolation and charge defects nearly without reduction of operating performance of MOS based devices. It is established that injection-thermal treatment results in improvements of injection and radiation stability of nanosized dielectric films of MOS devices by their modification.
KeywordsMOS structure nanosized dielectric film test injection current charge state radiation
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