Abstract
The conditions of injection-thermal treatment of metal-oxide-semiconductor (MOS) structures are studied. It is demonstrated that injection-thermal treatment (ITT) makes it possible to detect and eliminate structures with coarse defects of isolation and charge defects nearly without reduction of operating performance of MOS based devices. It is established that injection-thermal treatment results in improvements of injection and radiation stability of nanosized dielectric films of MOS devices by their modification.
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Katerinich, I.I., Kurin, F.M., and Popov, V.D., Method of Radiation and Thermal Treatment and Increasing of Durability of MOP Integral Circuits, Vopr. At. Nauki Tekh., Ser. Fiz. Radiats. Vozd. Radioelektr. Apparat., 1996, nos. 3–4, pp. 127–132.
Knoll, M., Brauning, D., and Fahrner, W.R., Comparative Studies of Tunnel Injection and Irradiation on Metal Oxide Semiconductor Structures, J. Appl. Phys., 1982, vol. 53, no. 10, pp. 6946–6952.
Andreev, V.V., Bednyakov, A.A., Novikov, L.S., Solov’ev, G.G., Stolyarov, A.A., and Loskutov, S.A., Comparative Study of Charge State of MOS-Structures upon Proton Irradiation and Charge Injection in Strong Electrical Fields, Vopr. At. Nauki Tekh. Ser. Fiz. Radiats. Vozd. Radioelektr. Apparat., 2002, nos. 1–2, pp. 61–66.
Arnold, D., Cartier, E., and DiMaria, D.J., Theory of High-Field Electron Transport and Impact Ionization in Silicon Dioxide, Phys. Rev. B: Condens. Matter, 1994, vol. 49, no. 15, pp. 10278–10297.
Lombardo, S., Stathis, J.H., Linder, P., Pey, K.L., Palumbo, F., and Tung, C.H., Dielectric Breakdown Mechanisms in Gate Oxides, J. Appl. Phys., 2005, vol. 98, nos. 1–36, p. 121301.
Bondarenko, G.G., Andreev, V.V., Maslovsky, V.M., Stolyarov, A.A., and Drach, V.E., Plasma and Injection Modification of Gate Dielectric in MOS Structures, Thin Solid Films, 2003, vol. 427, pp. 377–380.
Andreev, V.V., Bondarenko, G.G., Stolyarov, A.A., Vasyutin, D.S., and Mikhal’kov, A.M., Study of Effect of Injection Modification Modes on Charge State of Undergate Dielectric of MOS-Devices, Perspekt. Mater., 2009, no. 2, pp. 45–51.
Andreev, V.V., Stolyarov, A.A., Vasyutin, D.S., and Mikhal’kov, A.M., Quality Control of Dielectric Layers of Integral Circuits and Devices of Microsystem Equipment, Naukoemk. Tekhnol., 2010, vol. 11, no. 7, pp. 44–52.
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Original Russian Text © V.V. Andreev, G.G. Bondarenko, A.M. Mihal’kov, A.A. Stolyarov, I.V. Solov’ev, 2011, published in Perspektivnye Materialy, 2011, No. 3, pp. 29–32.
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Andreev, V.V., Bondarenko, G.G., Mihal’kov, A.M. et al. Improvement of injection and radiation stability of nanosized dielectric films of MOS devices. Inorg. Mater. Appl. Res. 2, 425–427 (2011). https://doi.org/10.1134/S2075113311050054
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DOI: https://doi.org/10.1134/S2075113311050054