Thermoelectric materials based on intermediate phases in the systems formed by chalcogenides of lead and bismuth
- 81 Downloads
The crystal structure and the thermoelectric properties of intermediate phases in the quasibinary systems PbTe-Bi2Te3 and PbSe-Bi2Se3 are studied. The compositions of the compounds of the homologous series [PbTe] m [Bi2Te3] n and [(PbSe)5] m [(Bi2Se3)3] n are identified. The significant difference in quantity, composition, and structure of the intermediate phases in the above two systems is shown. The PbTe-Bi2Te3 system is found to contain a series of tetradymite-like compounds with a trigonal symmetry; the PbSe-Bi2Se3 system is characterized by the formation of compounds with monoclinic lattices of a canizzarite mineral type. A correlation between the behavior of the thermoelectric properties and the crystal structure of the ternary compounds is revealed. The thermoelectric properties of alloys of the solid solutions based on the binary components PbTe, PbSe, and Bi2Te3 are studied.
Key wordsthermoelectric materials semiconductors systems PbTe-Bi2Te3 and PbSe-Bi2Se3 ternary compounds crystal structures layered chalcogenides homologous series thermoelectric properties
Unable to display preview. Download preview PDF.
- 1.Kanatzidis, M.G., The Role of Solid State Chemistry in the Discovery of New Thermoelectric Materials, in Semiconductors and Semimetals, Tritt, M.T., Ed., San Diego, San Francisco, New York, Boston, London, Sydney, Tokyo: Acad. Press, 2001, vol. 69, pp. 51–98.Google Scholar
- 2.Shelimova, L.E., Karpinskii, O.G., Konstantinov, P.P., et al., Layered Chalcogenides in AIVBVI—(AIV—Ge, Sn, Pb; BVI—Te, Se; AV—Bi, Sb) Quasibinary Systems are the Promising Thermoelectric Materials for Thermogenerators, Perspekt. Mater., 2006, no. 3, pp. 5–17.Google Scholar
- 3.Karpinskii, O.G., Shelimova, L.E., Avilov, E.S., et al., X-ray Research of Mixed Layer Compounds in PbTe-Bi2Te3 System, Neorgan. Mater., 2002, vol. 38, no.1, pp. 24–32.Google Scholar
- 4.Golovanova, N.S., Zlomanov, V.P., and Tananaeva, O.I., Research of Interaction between Lead Telluride and Bismuth Telluride, Izv. Akad. Nauk USSR, Neorg. Mater., 1983, vol. 19, no.5, pp. 740–743.Google Scholar
- 5.Chami, R., Brun, G., Tedenac, J.-C., et al., Contribution a l’etude du ternaire plomb-bismuth-tellure, Rev. Chim. Miner., 1983, vol. 20, no.3, pp. 305–313.Google Scholar
- 6.Fiziko-khimicheskie svoistva poluprovodnikovykh veshchestv. Spravochnik (Physicochemical Properties of Semiconductor Matters: Handbook), Novoselova, A.V., Ed., Moscow: Nauka, 1979.Google Scholar
- 7.Chung, D.-Y., Lane, M.A., Ireland, J.R., et al., Compositional and Structural Modifications in Ternary and Quaternary Bismuth Chalcogenides and Their Thermoelectric Properties, Mater. Res. Soc. Symp., 2000, vol. 626, pp. Z7.4.1–Z7.4.6.Google Scholar
- 8.Shelimova, L.E., Karpinskii, O.G., and Zemskov, V.S., X-ray Research of Layered Compounds in PbSe-Bi2Se3 System, Neorgan. Mater., 2008, vol. 44, no.9, pp. 1046–1050.Google Scholar
- 9.Liu, H. and Chang, L.L.Y., Lead and Bismuth Chalcogenide System, Amer. Mineral., 1994, vol. 79, pp. 1159–1166.Google Scholar
- 11.Elagina, E.I., Research of PbSe-Bi2Se3 System, in Trudy 4-ogo soveshchaniya po poluprovodnikovym materialam. Sb. Voprosy metallurgii i fizika polyprovodnikov (Proc. 4th Meeting on Semiconductor Materials, Collection of Works: Problems of Metallurgy and Semiconductors Physics), Moscow: Izd-vo Akad. Nauk USSR, 1961, pp. 153–158.Google Scholar
- 12.Abrikosov, N.Kh., Bankina, V.F., Poretskaya, L.V., et al., Poluprovodnikovye materialy, ikh poluchenie i svoistva (Semiconductor Materials, Production and Properties), Moscow: Nauka, 1967.Google Scholar