Abstract
The catalytic properties of Amberlyst A-21 anion-exchange resin in the gas-phase disproportionation reaction of trichlorosilane (TCS) at temperatures (up to 423 K) critical for the resin are investigated for the first time. It is established using thermal desorprtion followed by pyrolysis that Amberlyst A-21 undergoes thermal destruction to form chloromethane and the spherical polymer matrix decomposes at above 423 K. In the temperature range of 333–423 K, the apparent activation energy of disproportionation of TCS with using Amberlyst A-21 is 37.12 kJ/mol and the reaction rate constant is 0.80 s−1 (at 423 K). Three months of testing of the resin in disproportionation of TCS at 423 K demonstrates its stable catalytic activity.
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REFERENCES
Ahn, S.H., Chun, D.M., and Chu, W.S., Int. J. Precis. Eng. Manuf., 2013, vol. 14, no. 6, pp. 873–874.
Shah, A.V., Meier, J., Vallat-Sauvain, E., Wyrsch, N., Kroll, U., Droz, C., and Graf, U., Sol. Energy Mater. Sol. Cells, 2003, vol. 78, nos. 1–4, pp. 469–491.
Handbook of Semiconductor Manufacturing Technology, Nishi, Y. and Doering, R., Eds., Boca Raton, FL: CRC Press, 2007.
Eaglesham, D.J. and Cerullo, M., Phys. Rev. Lett., 1990, vol. 64, no. 16, pp. 1943–1947.
Chu, S. and Majumdar, A., Nature, 2012, vol. 488, no. 7411, pp. 294–303.
Bathey, B.R. and Cretella, M.C., J. Mater. Sci., 2005, vol. 17, no. 11, pp. 3877–3896.
Handbook of Semiconductor Silicon Technology, O’Mara, W.C., Herring, R.B., and Hunt, L.P., Eds., New Jersey: Noyes Publications, 1990.
Green, M.A., Sol. Energy, 2004, vol. 76, nos. 1–3, pp. 3–8.
Duchemin, M.J.-P., Bonnet, M.M. and Koelsch, M.F., J. Electrochem. Soc., 1978, vol. 125, no. 4, pp. 637–644.
Handbook of Photovoltaic Science and Engineering, Luque, A. and Hegedus, S., Eds., New York: Wiley, 2011.
US Patent 3963838, 1976.
Iya, S.K., Flagella, R.N., and Dipaolo, F.S., J. Electrochem. Soc., 1982, vol. 129, pp. 1531–1535.
WO Patent 1996/041036, 1997.
Yasuda, K. and Okabe, T.H., J. Jpn. Inst. Met., 2010, vol. 74, pp. 1–9.
Hou, Y.Q., Xie, G., Nie, Z.F., and Li, N., Adv. Mater. Res., 2014, vols. 881–883, pp. 1805–1808.
Liu, S.-S., and Xiao, W.-D., Chem. Eng. Sci., 2015, vol. 127, pp. 84–94.
Union Carbide Corporation Final Report, Springfield, VA: National Technical Information Center, 1981, DOE/JPL contract no. 954334.
RF Patent 2152902, 2000.
Mehler, M., Electron. News., 1984, vol. 30, no. 1485, p. 54.
Iya, J., J. Cryst. Growth, 1986, vol. 75, no. 1, pp. 88–90.
Vorotyntsev, V.M., Mochalov, G.M., and Nipruk, O.V., Russ. J. Appl. Chem., 2001, vol. 74, no. 4, pp. 621–625.
US Patent 4 704 264, 1987.
US Patent 4 667 048, 1987.
US Patent 4 395 389, 2017.
Vorotyntsev, A.V., Zelentsov, S.V., and Vorotyntsev, V.M., Russ. Chem. Bull., 2011, vol. 60, no. 8, pp. 1531–1536.
Vorotyntsev, A.V., Mochalov, G.M., and Vorotyntsev, V.M., Inorg. Mater., 2013, vol. 48, no. 1, pp. 1–5.
Vorotyntsev, A.V., Petukhov, A.N., Vorotyntsev, I.V., Sazanova, T.S., Trubyanov, M.M., Kopersak, I.Y., Razov, E.N., and Vorotyntsev, V.M., Appl. Catal., B, 2016, vol. 198, pp. 334–346.
Rossi, J.A., Willardson, R.K., Weber, E.R., and Rode, D.L., in Silicon Epitaxy, Semiconductors and Semimetals, San Diego, CA: Academic Press, 2001.
Lynch, D., Ben, W., and Ji, X., in 140th Annual Meeting and Exhibition, vol. 1: Materials Processing and Energy Materials, New York: Wiley, 2011, pp. 685–692.
Kornev, R.A., Vorotyntsev, V.M., Petukhov, A.N., Razov, E.N., Mochalov, L.A., Trubyanov, M.M., and Vorotyntsev, A.V., RSC Adv., 2016, vol. 6, no. 102, pp. 99816–99824.
Mansfeld, D.A., Vodopyanov, A.V., Golubev, S.V., Sennikov, P.G., Mochalov, L.A., Andreev, B.A., Drozdov, Yu.N., Drozdov, M.N., Shashkin, V.I., Bulkin, P., and Roca i Cabarrocas, P., Thin Solid Films, 2014, vol. 562, pp. 114–117.
Bruno, G., Capezzuto, P., Cicala, G., and Cramarossa, F., Plasma Chem. Plasma Process., 1986, vol. 6, no. 2, pp. 109–125.
Platz, R. and Wagner, S., Appl. Phys. Lett., 1998, vol. 73, pp. 1236–1238.
Mochalov, L.A., Kornev, R.A., Nezhdanov, A.V., Mashin, A.I., Lobanov, A.S., Kostrov, A.V., Vorotyntsev, V.M., and Vorotyntsev, A.V., Plasma Chem. Plasma Process., 2016, vol. 36, no. 3, pp. 849–856.
US Patent 2627451, 1956.
Vorotyntsev, A.V., Zelentsov, S.V., Vorotyntsev, V.M., Petukhov, A.N., and Kadomtseva, A.V., Russ. Chem. Bull., 2015, vol. 64, no. 4, pp. 759–765.
US Patent 2 732 280, 1956.
US Patent 2 834 648, 1958.
US Patent 4 605 543, 1986.
Zagorodni, A.A., Ion Exchange Materials: Properties and Applications, Amsterdam: Elsevier, 2007.
US Patent 3 968 199, 1976.
US Patent 4 340 574, 1982.
US Patent 4 613 489, 1986.
US Patent 4 548 917, 1985.
DE Patent 2 162 537, 1972.
Huang, X., Ding, W.-J., Yan, J.-M., and Xia, W.-D., Ind. Eng. Chem. Res., 2013, vol. 52, no. 18, pp. 6211–6220.
Alcántara-Avila, J.R., Sillas-Delgado, H.A., Segovia-Hernández, J.G., Gómez-Castro, F.I., and Cervantes-Jauregui, J.A., Comput. Chem. Eng., 2015, vol. 78, pp. 85–93.
Devyatykh, G.G., Panov, G.I., and Kharitonov, A.S., J. Inorg. Chem., 1987, vol. 32, no. 4, pp. 1002–1005.
Vorotyntsev, V.M., Balabanov, V.V., and Shamrakov, D.A., High-Purity Subst., 1987, vol. 3, pp. 74–78.
Grishnova, N.D., Gusev, A.V., Moiseev, A.N., Mochalov, G.M., Balanovskii, N.V., and Kharina, T.P., Russ. J. Appl. Chem., 1999, vol. 72, no. 10, pp. 1761–1766.
Vorotyntsev, A.V., Petukhov, A.N., Makarov, D.A., Razov, E.N., Vorotyntsev, I.V., Nyuchev, A.V., Kirillova, N.I., and Vorotyntsev, V.M., Appl. Catal., B, 2018, vol. 224, pp. 621–633.
ACKNOWLEDGMENTS
This work was supported by Russian Foundation for Basic Research, project no. 16-38-60192 mol_a_dk. The samples were characterized with the support of the RF Ministry of Education and Science as part of a State Task, project no. 11/17-01.10.
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Vorotyntsev, A.V., Petukhov, A.N., Razov, E.N. et al. Catalytic Activity of Amberlyst A-21 in the Disproportionation of Trichlorosilane at Critical Temperatures. Catal. Ind. 10, 263–269 (2018). https://doi.org/10.1134/S2070050418040141
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DOI: https://doi.org/10.1134/S2070050418040141