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Molecular diodes and negative differential resistances based on polyoxometalates

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Abstract

By measuring the tunnel conductivity of polyoxometalates (POM) and their organic derivatives in experiments with a scanning tunnel microscope (STM), effects have been found which are promising for use in nanoelectronics. Large-scale multiple negative differential resistances (with record peak-to-valley ratios up to 102) have been observed under conditions which do not require low temperatures and high vacuum. The diode properties of organo-polyoxometalate complexes with coefficients of rectification up to 35–40 are revealed. A mechanism of biresonance tunnel electron transport in strong electric fields, which explains the effects, has been developed. A strategy for selecting nanomaterials which can improve the functional properties of molecular electronic elements based on the optimization of the composition and architecture of polyoxometalate complexes has been proposed.

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Authors and Affiliations

  1. Semenov Institute of Chemical Physics, Russian Academy of Sciences, ul. Kosygina 4, Moscow, 117977, Russia

    F. I. Dalidchik, S. A. Kovalevskii, E. M. Balashov & B. A. Budanov

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  1. F. I. Dalidchik
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  2. S. A. Kovalevskii
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  3. E. M. Balashov
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  4. B. A. Budanov
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Corresponding author

Correspondence to E. M. Balashov.

Additional information

Original Russian Text © F.I. Dalidchik, S.A. Kovalevskii, E.M. Balashov, B.A. Budanov, 2016, published in Rossiiskie Nanotekhnologii, 2016, Vol. 11, Nos. 5–6.

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Dalidchik, F.I., Kovalevskii, S.A., Balashov, E.M. et al. Molecular diodes and negative differential resistances based on polyoxometalates. Nanotechnol Russia 11, 331–336 (2016). https://doi.org/10.1134/S1995078016030058

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  • DOI: https://doi.org/10.1134/S1995078016030058

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