Molecular diodes and negative differential resistances based on polyoxometalates
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By measuring the tunnel conductivity of polyoxometalates (POM) and their organic derivatives in experiments with a scanning tunnel microscope (STM), effects have been found which are promising for use in nanoelectronics. Large-scale multiple negative differential resistances (with record peak-to-valley ratios up to 102) have been observed under conditions which do not require low temperatures and high vacuum. The diode properties of organo-polyoxometalate complexes with coefficients of rectification up to 35–40 are revealed. A mechanism of biresonance tunnel electron transport in strong electric fields, which explains the effects, has been developed. A strategy for selecting nanomaterials which can improve the functional properties of molecular electronic elements based on the optimization of the composition and architecture of polyoxometalate complexes has been proposed.
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- 11.A. M. Dykhne, S. Yu. Vasil’ev, O. A. Petrii, A. G. Rudavets, and G. A. Tsirlina, Phys. Dokl. 44, 653 (1999).Google Scholar
- 12.I. Kovács, J. Phys.: Conf. Ser. 61, 623 (2007).Google Scholar
- 17.F. I. Dalidchik, S. A. Kovalevskii, E. M. Balashov, B. A. Budanov, in Proceedings of the 19th International Symposium on Nanophysics and Nanoelectronics, March 10–14, 2015, Nizh. Novgorod, Vol. 1, pp. 250–251.Google Scholar