Abstract
It is found that if thermoelectric material has a structure in the form of alternating regions with low and high thermal conductivity and electrical conductivity, and thus the width of the regions with low thermal conductivity and electrical conductivity does not exceed the mean free path of electrons in them, then the thermoelectric figure of merit of such a material may be Z > 4.
Similar content being viewed by others
References
A. V. Dmitriev and I. P. Zvyagin, “Current trends in the physics of thermoelectric materials,” Phys. Usp. 53, 789–803 (2010).
V. F. Kharlamov, “Thermoelectric figure of merit of a material consisting of semiconductor or metal particles,” J. Exp. Theor. Phys. 117,83(2013).
V. L. Bonch-Bruevich and S. G. Kalashnikov, Semiconductor Physics (Nauka, Moscow, 1990) [in Russian].
V. M. Kozhevin, D. A. Yavsin, I. P. Smirnova, M. M. Kulagina, and S. A. Gurevich, “Effect of oxidation on the electrical properties of granular copper nanostructures,” Phys. Solid State 45,1993(2003).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.F. Kharlamov, F.V. Kharlamov, 2015, published in Rossiiskie Nanotekhnologii, 2015, Vol. 10, Nos. 9–10.
Rights and permissions
About this article
Cite this article
Kharlamov, V.F., Kharlamov, F.V. Thermoelectric materials in the form of nanostructures. Nanotechnol Russia 10, 786–793 (2015). https://doi.org/10.1134/S1995078015050109
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1995078015050109