Nanotechnologies in Russia

, Volume 10, Issue 7–8, pp 530–536 | Cite as

The use of ion irradiation for converting superconducting thin-film NbN into niobium oxide Nb2O5

  • B. A. Gurovich
  • K. E. Prihod’ko
  • M. A. Tarkhov
  • E. A. Kuleshova
  • D. A. Komarov
  • V. L. Stolyarov
  • E. D. Ol’shanskii
  • B. V. Goncharov
  • D. A. Goncharova
  • L. V. Kutuzov
  • A. G. Domantovskii
  • Z. V. Lavrukhina
  • M. M. Dement’eva
Article

Abstract

It is shown experimentally that the use of ion irradiation allows one to convert superconducting thin-film niobium nitride into dielectric niobium oxide in a controllable manner. The conversion of NbN into Nb2O5 throughout the entire thickness of the film is demonstrated via transmission electron microscopy and layer-by-layer XPS analysis. This conversion is followed by a corresponding increase in the film thickness with no signs of sputtering and thus provides the possibility of forming dielectric regions of the required sizes and shapes in the process of fabrication of various functional cryoelectronic elements.

Keywords

Niobium Tunnel Junction Niobium Oxide Superconductor Tunnel Junction Niobium Nitride 

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Copyright information

© Pleiades Publishing, Ltd. 2015

Authors and Affiliations

  • B. A. Gurovich
    • 1
  • K. E. Prihod’ko
    • 1
    • 2
  • M. A. Tarkhov
    • 1
  • E. A. Kuleshova
    • 1
  • D. A. Komarov
    • 1
  • V. L. Stolyarov
    • 1
  • E. D. Ol’shanskii
    • 1
  • B. V. Goncharov
    • 1
  • D. A. Goncharova
    • 1
  • L. V. Kutuzov
    • 1
  • A. G. Domantovskii
    • 1
  • Z. V. Lavrukhina
    • 1
  • M. M. Dement’eva
    • 1
  1. 1.National Research Center “Kurchatov Institute,”MoscowRussia
  2. 2.National Research Nuclear Institute (MEPhI)MoscowRussia

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