Abstract
It is shown experimentally that the use of ion irradiation allows one to convert superconducting thin-film niobium nitride into dielectric niobium oxide in a controllable manner. The conversion of NbN into Nb2O5 throughout the entire thickness of the film is demonstrated via transmission electron microscopy and layer-by-layer XPS analysis. This conversion is followed by a corresponding increase in the film thickness with no signs of sputtering and thus provides the possibility of forming dielectric regions of the required sizes and shapes in the process of fabrication of various functional cryoelectronic elements.
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Original Russian Text © B.A. Gurovich, K.E. Prihod’ko, M.A. Tarkhov, E.A. Kuleshova, D.A. Komarov, V.L. Stolyarov, E.D. Ol’shanskii, B.V. Goncharov, D.A. Goncharova, L.V. Kutuzov, A.G. Domantovskii, Z.V. Lavrukhina, M.M. Dement’eva, 2015, published in Rossiiskie Nanotekhnologii, 2015, Vol. 10, Nos. 7–8.
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Gurovich, B.A., Prihod’ko, K.E., Tarkhov, M.A. et al. The use of ion irradiation for converting superconducting thin-film NbN into niobium oxide Nb2O5 . Nanotechnol Russia 10, 530–536 (2015). https://doi.org/10.1134/S1995078015040072
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DOI: https://doi.org/10.1134/S1995078015040072