Nanotechnologies in Russia

, Volume 10, Issue 1–2, pp 34–41 | Cite as

Influence of plasmodynamic synthesis energy in Si-C system on the product phase composition and dispersion

  • A. A. Sivkov
  • D. S. Nikitin
  • A. Ya. Pak
  • I. A. Rakhmatullin


The results of experimental studies on ultradispersed silicon carbide synthesis and production upon a hypervelocity silicon-carbon plasma jet influencing a copper barrier are presented. A significant increase of β-SiC content to 88% and average crystallite size from ∼70 to ∼140 nm was found by XRD, SEM, and TEM for energy growth from ∼10.0 to ∼30.0 kJ.


Transmission Electron Microscopy Image Silicon Carbide Synthesis Product Scanning Electron Microscopy Picture Coherent Scattering Region 
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Copyright information

© Pleiades Publishing, Ltd. 2015

Authors and Affiliations

  • A. A. Sivkov
    • 1
  • D. S. Nikitin
    • 1
  • A. Ya. Pak
    • 1
  • I. A. Rakhmatullin
    • 1
  1. 1.National Research Tomsk Polytechnic UniversityTomskRussia

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