New approach to the synthesis of porous silicon with silver nanoparticles using ion implantation technique
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A new technique for the synthesis of porous silicon layers with silver nanoparticles has been proposed which is based on the high-dose low-energy implantation of crystalline silicon with metal ions. In order to demonstrate this technique, in this work we implanted a polished wafer of monocrystalline silicon Ag+-ions with an energy of 30 keV at a dose of 1.5 × 1017 ion/cm2 and a current density in the ion beam of 4 μA/cm2. Using high-resolution scanning electron and atomic force microscopy, as well as X-ray spectral microprobe analysis and Raman scattering, it is shown that an amorphous layer of a porous silicon is formed at the surface of silicon as a result of implantation with average sizes of pore holes on the order of 150–180 nm; depth of about 100 nm; and thickness of the walls of 30–60 nm, in whose structure silver nanoparticles are located with a diameter of 5–10 nm. In addition, it is shown that the formation of pores by implantation with silver ions is accompanied by sputtering the surface of silicon.
KeywordsPorous Silicon Porous Silicon Layer Monocrystalline Silicon Silicon Implantation Spectral Microprobe Analysis
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