Advertisement

Nanotechnologies in Russia

, Volume 9, Issue 3–4, pp 163–167 | Cite as

New approach to the synthesis of porous silicon with silver nanoparticles using ion implantation technique

  • A. L. Stepanov
  • Yu. N. Osin
  • A. A. Trifonov
  • V. F. Valeev
  • V. I. Nuzhdin
Article

Abstract

A new technique for the synthesis of porous silicon layers with silver nanoparticles has been proposed which is based on the high-dose low-energy implantation of crystalline silicon with metal ions. In order to demonstrate this technique, in this work we implanted a polished wafer of monocrystalline silicon Ag+-ions with an energy of 30 keV at a dose of 1.5 × 1017 ion/cm2 and a current density in the ion beam of 4 μA/cm2. Using high-resolution scanning electron and atomic force microscopy, as well as X-ray spectral microprobe analysis and Raman scattering, it is shown that an amorphous layer of a porous silicon is formed at the surface of silicon as a result of implantation with average sizes of pore holes on the order of 150–180 nm; depth of about 100 nm; and thickness of the walls of 30–60 nm, in whose structure silver nanoparticles are located with a diameter of 5–10 nm. In addition, it is shown that the formation of pores by implantation with silver ions is accompanied by sputtering the surface of silicon.

Keywords

Porous Silicon Porous Silicon Layer Monocrystalline Silicon Silicon Implantation Spectral Microprobe Analysis 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    A. A. Ishchenko, G. V. Fetisov, and L. A. Aslanov, Nanosilicon: Properties, Production, Research and Checkingup Methods (Fizmatlit, Moscow, 2011) [in Russian].Google Scholar
  2. 2.
    V. V. Kozlovskii, V. A. Kozlov, and V. N. Lomasov, Fiz. Tekh. Poluprovodn. 34, 129 (2000).Google Scholar
  3. 3.
    H. J. Stein, S. M. Myers, and D. M. Follstaedt, J. Appl. Phys. 73, 2755 (1993).CrossRefGoogle Scholar
  4. 4.
    G. F. Cerofolini, L. Meda, R. Balboni, F. Corni, S. Frabboni, G. Ottaviani, R. Tonini, M. Anderle, and R. Canteri, Phys. Rev. B 46, 2061 (1992).CrossRefGoogle Scholar
  5. 5.
    M. F. Galyautdinov, N. V. Kurbatova, E. Yu. Buinova, E. I. Shtyrkov, and A. A. Bukharaev, Fiz. Tekh. Poluprovodn. 31(9), 1130 (1997).Google Scholar
  6. 6.
    T. S. Amran, M. R. Hashim, N. K. Al-Obaidi, H. Yazid, and R. Adnan, Nanoscale Res. Lett. 8, 35 (2013).CrossRefGoogle Scholar
  7. 7.
    Y. Wang, Y. P. Liu, H. L. Liang, Z. X. Mei, and X. L. Du, Phys. Chem. Chem. Phys. 12, 2345 (2013).CrossRefGoogle Scholar
  8. 8.
    U. Kreibig and M. Vollmer, Optical Properties of Metal Clusters (Springer-Verlag, Berlin, 1995).CrossRefGoogle Scholar
  9. 9.
    A. L. Stepanov, Ion-Synthesis of Metal Nanoparticles and Their Optical Properties (Nova Sci. Publ., New York, 2011).Google Scholar
  10. 10.
    A. L. Stepanov, V. F. Valeev, V. I. Nuzhdin, and V. N. Popok, Nanotech. Russ. 6(7–8), 490 (2011).CrossRefGoogle Scholar
  11. 11.
    A. L. Stepanov, Zh. Tekh. Fiz. 74(2), 1–12 (2004).Google Scholar
  12. 12.
    J. Peckham and G. T. Andrews, Semicond. Sci. Technol. 28, 105027-1–105027-5 (2013).Google Scholar
  13. 13.
    J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon Press, New York, 1985).Google Scholar
  14. 14.
    I. E. Tyschenko, V. P. Popov, A. B. Talochkin, A. K. Gutakovsskii, and K. S. Zhuravlev, Fiz. Tekh. Poluprovodn. 38, 111–116 (2004).Google Scholar
  15. 15.
    L. Romano, G. Impellizzeri, M. V. Tomasello, G. Giannazzo, C. Spinella, and M. G. J. Grimaldi, Appl. Phys. 107, 84314-1–84314-5 (2010).CrossRefGoogle Scholar
  16. 16.
    N. Gerasimenko and Yu. Parkhomenko, Silicon Is a Material for Nanoelectronics (Tekhnosfera, Moscow, 2007) [in Russian].Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2014

Authors and Affiliations

  • A. L. Stepanov
    • 1
    • 2
  • Yu. N. Osin
    • 2
  • A. A. Trifonov
    • 2
  • V. F. Valeev
    • 2
  • V. I. Nuzhdin
    • 2
  1. 1.Kazan Federal UniversityKazanRussia
  2. 2.Zavoisky Kazan Physicotechnical InstituteRussian Academy of SciencesKazanRussia

Personalised recommendations