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Binding energy of 2p-electrons of silicon atom. Substituents effects in Si-centered cation-radicals

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Abstract

The substituent effect was analyzed on the binding energy of 2p-electrons of the silicon atoms estimated by the X-ray electron spectroscopy or calculated by quantum chemistry method for 15 series of organosilicon compounds. It was established for the first time that the binding energy depended not only on the inductive and resonance effects of the substituents, but also on the polarization effect consisting in the electrostatic interaction of the positive charge on the silicon atom with the dipoles which this charge induced in the substituents. The contribution of the polarization effect reached 35%.

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Authors and Affiliations

  1. Razuvaev Institute of Organometallic Chemistry, Russian Academy of Sciences Nizhnii Novgorod, Nizhny Novgorod, 603950, Russia

    N. M. Khamaletdinova, O. V. Kuznetsova & A. N. Egorochkin

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  1. N. M. Khamaletdinova
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  2. O. V. Kuznetsova
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  3. A. N. Egorochkin
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Correspondence to N. M. Khamaletdinova.

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Original Russian Text © N.M. Khamaletdinova, O.V. Kuznetsova, A.N. Egorochkin, 2009, published in Zhurnal Organicheskoi Khimii, 2010, Vol. 46, No. 2, pp. 175–182.

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Khamaletdinova, N.M., Kuznetsova, O.V. & Egorochkin, A.N. Binding energy of 2p-electrons of silicon atom. Substituents effects in Si-centered cation-radicals. Russ J Org Chem 46, 166–173 (2010). https://doi.org/10.1134/S107042801002003X

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  • DOI: https://doi.org/10.1134/S107042801002003X

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