Abstract
The impact of the presence of the near-surface graded-gap layers with an increased content of CdTe on the admittance of MIS structures based on MBE-grown n-Hg1–xCdxTe (x = 0.22–0.23) with the Al2O3 insulating coating has been experimentally studied. It has been shown that the structures with a gradedgap layer are characterized by a deeper and wider capacitance dip in the low-frequency capacitance–voltage (CV) characteristic and by higher values of the differential resistance of the space-charge region than the structures without such a layer. It has been found that the main features of the hysteresis of capacitance dependences typical of the graded-gap structures with SiO2/Si3N4 are also characteristic of the MIS structures with the Al2O3 insulator. The factors that cause an increase in the CV characteristic hysteresis upon formation of the graded-gap layer in structures with SiO2/Si3N4 or Al2O3 are still debatable, although it may be assumed that oxygen plays a certain role in formation of this hysteresis.
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Original Russian Text © A.V. Voitsekhovskii, S.N. Nesmelov, S.M. Dzyadukh, V.V. Vasil’ev, V.S. Varavin, S.A. Dvoretsky, N.N. Mikhailov, M.V. Yakushev, G.Yu. Sidorov, 2016, published in Prikladnaya Fizika, 2016, No. 4, pp. 58–61.
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Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M. et al. Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCd x Te (x = 0.22–0.23) with the Al2O3 Insulator. J. Commun. Technol. Electron. 63, 281–284 (2018). https://doi.org/10.1134/S106422691803021X
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DOI: https://doi.org/10.1134/S106422691803021X