Abstract
A model for calculation of the angle of misorientation between the reflecting crystallographic planes and the plane of the semiconductor surface of a sample by means of high-resolution X-ray diffractometry has been developed. The model can minimize mechanical instrument errors, including the positioning and moving inaccuracies, and determine the optimum parameters of sample position with respect to the incident radiation for correct investigations of the perfection of the crystal structure. The principle of conduction of the experiment and the mathematical model used for processing of the obtained data are described. To find macrodefects of the crystal structure, in particular, blocks, the map of the distribution of parameters of the the rocking curve of the entire sample was obtained using the developed model. This allowed determination of the blocks boundaries and their mutual orientation in the directions longitudinal relative to the wafer. The model was tested on a wafer cut from a bulk indium antimonide single crystal grown by the Czochralski method and subjected to chemical-dynamic and chemical-mechanical polishing.
Similar content being viewed by others
References
A. Rogalski, Progress in Quant. Electron. 27 (2), 59 (2003).
K. O. Boltar, P. V. Vlasov, A. A. Lopukhin, et al., Usp. Prikl. Fiz. 1, 733 (2013).
N. I. Iakovleva and K. O. Boltar, Prikl. Fiz., No. 2, 45 (1999).
I. D. Burlakov, K. O. Boltar, P. V. Vlasov, et al., Prikl. Fiz., No. 3, 58 (2016).
I. D. Burlakov, V. P. Ponomarenko, A. M. Filachev, and E. V. Degtyarev, Prikl. Fiz., No. 2, 43 (2007).
G. Dhanaraj, K. Byrappa, V. Prasad, and M. Dudley, Handbook of Crystal Growth (Springer-Verlag, Berlin, 2010).
V. K. Dixit, B. V. Rodrigues, H. L. Bhat, et al., J. Appl. Phys. 90, 1750 (2001).
D. K. Bowen and B. K. Tanner, High Resolution X-Ray Diffractometry and Topography (Taylor & Francis, London, 1998; Nauka, Moscow, 2002).
J. A. Godines, R. Castillo, J. Martinez, et al., J. Crystal Growth. 178, 422 (1997).
L. V. Kiseleva, A. A. Lopukhin, Yu. S. Mezin, et al., Prikl. Fiz., No. 5, 84 (2015).
P. Capper, Bulk Growth of Electronic, Optical and Optoelectronic Materials (Wiley, Chichester, 2005).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.D. Shabrin, A.E. Goncharov, D.A. Pashkeev, A.V. Lyalikov, A.V. Egorov, 2017, published in Prikladnaya Fizika, 2017, No. 3, pp. 101–105.
Rights and permissions
About this article
Cite this article
Shabrin, A.D., Goncharov, A.E., Pashkeev, D.A. et al. Analysis of Misorientation of Single-Crystal Blocks in the Bulk InSb Crystal. J. Commun. Technol. Electron. 63, 309–313 (2018). https://doi.org/10.1134/S106422691803018X
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S106422691803018X