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InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3–5 μm

  • Articles from the Russian Journal Prikladnaya Fizika
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Abstract

Photoelectric properties of different stressed InGaAs/AlGaAs heterostructures with quantum wells grown by the method of molecular beam epitaxy on GaAs substrates for mid-wavelength infrared largeformat photodetector arrays operating in the spectral range 3–5 μm have been investigated. It has been shown that the change in the composition of barrier layers leads to a significant shift of the photosensitivity spectra of such heterostructures.

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Authors and Affiliations

  1. ZAO Svetlana-Rost, St. Petersburg, 194156, Russia

    A. L. Dudin, N. I. Katsavets, D. M. Krasovitsky, S. V. Kokin, V. P. Chaly & I. V. Shukov

Authors
  1. A. L. Dudin
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  2. N. I. Katsavets
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  3. D. M. Krasovitsky
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  4. S. V. Kokin
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  5. V. P. Chaly
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  6. I. V. Shukov
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Corresponding author

Correspondence to A. L. Dudin.

Additional information

Original Russian Text © A.L. Dudin, N.I. Katsavets, D.M. Krasovitsky, S.V. Kokin, V.P. Chaly, I.V. Shukov, 2016, published in Prikladnaya Fizika, 2016, No. 6, pp. 49–52.

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Dudin, A.L., Katsavets, N.I., Krasovitsky, D.M. et al. InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3–5 μm. J. Commun. Technol. Electron. 63, 296–299 (2018). https://doi.org/10.1134/S1064226918030063

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  • DOI: https://doi.org/10.1134/S1064226918030063

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