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Precision Etching of Thin Doped Silicon Layers

  • A. Yu. Borovkova
  • T. N. Grischina
  • E. S. Matyuhina
Articles from the Russian Journal Prikladnaya Fizika
  • 12 Downloads

Abstract

The optimum etchant composition for precise removal of a thin high-doped silicon gettering layer is determined. It is found that the best-controlled etching is provided by the following composition: HNO3: HF: CH3COOH = 40: 1: 1. This composition etches the entire gettering layer away while preserving the required thickness of the contact layer, which prevents the space-charge region of the p–n junction from emerging at the back surface of the base of a photosensitive element. Thus, this etchant provides an opportunity to reduce the magnitude of dark currents and raise the percentage yield.

Keywords

silicon gettering layer etchant 

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Copyright information

© Pleiades Publishing, Inc. 2018

Authors and Affiliations

  • A. Yu. Borovkova
    • 1
  • T. N. Grischina
    • 1
  • E. S. Matyuhina
    • 1
  1. 1.Orion Research and Production AssociationMoscowRussia

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