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Electrothermal model of the electromagnetic irradiation of semiconductor structures

  • Physical Processes in Electron Devices
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Abstract

A numerical electrothermal model of the action of electromagnetic radiation (EMR) pulses on discrete electromagnetic devices and IC elements is presented. A silicon high-frequency diode with the Schottky barrier is used as an example in the numerical calculation of electro- and thermophysical processes at various energy and power parameters of the EMR pulse.

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Authors and Affiliations

  1. State Science Research Experimental Institute of Technical Information Protection Problems, Federal Service for Technical and Export Control of the Russian Federation, 9 January st. 280a, Voronezh, 394026, Russia

    S. A. Mesheryakov & A. V. Berdyshev

Authors
  1. S. A. Mesheryakov
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  2. A. V. Berdyshev
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Correspondence to S. A. Mesheryakov.

Additional information

Original Russian Text © S.A. Mesheryakov, A.V. Berdyshev, 2013, published in Radiotekhnika i Elektronika, 2013, Vol. 58, No. 11, pp. 1127–1135.

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Mesheryakov, S.A., Berdyshev, A.V. Electrothermal model of the electromagnetic irradiation of semiconductor structures. J. Commun. Technol. Electron. 58, 1088–1095 (2013). https://doi.org/10.1134/S1064226913110119

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  • DOI: https://doi.org/10.1134/S1064226913110119

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