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Plasma Reflection in Multigrain Layers of Narrow-Bandgap Semiconductors

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Abstract

Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15–25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ∼7 μm) is characterized by an absorption band at 2.1–2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50–70 nm) exhibited absorption maxima at 7, 10, and 17 μm, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.

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Authors and Affiliations

  1. Saratov State University, Saratov, 410012, Russia

    N. D. Zhukov, M. I. Shishkin & A. G. Rokakh

Authors
  1. N. D. Zhukov
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  2. M. I. Shishkin
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  3. A. G. Rokakh
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Correspondence to M. I. Shishkin.

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Original Russian Text © N.D. Zhukov, M.I. Shishkin, A.G. Rokakh, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 8, pp. 102–110.

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Zhukov, N.D., Shishkin, M.I. & Rokakh, A.G. Plasma Reflection in Multigrain Layers of Narrow-Bandgap Semiconductors. Tech. Phys. Lett. 44, 362–365 (2018). https://doi.org/10.1134/S1063785018040284

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  • DOI: https://doi.org/10.1134/S1063785018040284

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