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Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range

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Abstract

We present the results of an experimental study of two-section semiconductor lasers with active region consisting of three 3.1 nm InGaAs/InGaAlAs quantum wells. Passive mode-locking regime with a repetition rate of 10 GHz is realized. Different approaches have been compared to determine the stability of pulse repetition.

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Authors and Affiliations

  1. Ioffe Institute, St. Petersburg, Russia

    M. S. Buyalo, I. M. Gadzhiyev, N. D. Il’inskaya, A. A. Usikova & E. L. Portnoi

  2. “Connector Optics, LLC”, St. Petersburg, Russia

    I. I. Novikov & L. Ya. Karachinsky

  3. ITMO University, St. Petersburg, Russia

    I. I. Novikov, L. Ya. Karachinsky, E. S. Kolodeznyi, V. E. Bougrov & A. Yu. Egorov

Authors
  1. M. S. Buyalo
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  2. I. M. Gadzhiyev
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  3. N. D. Il’inskaya
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  4. A. A. Usikova
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  5. I. I. Novikov
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  6. L. Ya. Karachinsky
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  7. E. S. Kolodeznyi
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  8. V. E. Bougrov
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  9. A. Yu. Egorov
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  10. E. L. Portnoi
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Corresponding author

Correspondence to M. S. Buyalo.

Additional information

Original Russian Text © M.S. Buyalo, I.M. Gadzhiyev, N.D. Il’inskaya, A.A. Usikova, I.I. Novikov, L.Ya. Karachinsky, E.S. Kolodeznyi, V.E. Bougrov, A.Yu. Egorov, E.L. Portnoi, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 4, pp. 95–102.

The article was translated by the authors.

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Buyalo, M.S., Gadzhiyev, I.M., Il’inskaya, N.D. et al. Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range. Tech. Phys. Lett. 44, 174–177 (2018). https://doi.org/10.1134/S1063785018020189

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  • DOI: https://doi.org/10.1134/S1063785018020189

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